Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

  • Khodjakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan https://orcid.org/0000-0002-2164-6797
  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Jonibek J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Mansur Bekmuratov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0006-3061-1568
  • Oralbay N. Yusupov Nukus State Pedagogical Institute named after Ajiniyaz, Nukus, Uzbekistan https://orcid.org/0009-0005-8419-2293
  • Shahriyor B. Norkulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-2171-4884
  • Khusniddin J. Matchonov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-8697-5591
DOI: https://doi.org/10.26565/2312-4334-2024-4-33
Keywords: Silicon, Substrate, Impurity, Rare Earth element, Diffusion, Doping, Ytterbium, MIS structure

Abstract

The characteristics of silicon MIS structures with ytterbium impurity are studied using non-stationary capacitance spectroscopy of deep levels. It is established that the presence of ytterbium atoms in the bulk of the silicon substrate leads to a shift in the capacitance-voltage characteristics towards positive bias voltages and a decrease in the density Nss of the surface states of the MIS structures. It is shown that this effect depends on the concentration of ytterbium atoms in the silicon substrate of the studied structures. In MIS structures based on Si<Yb>, one deep level with an ionization energy Ec-0.32 eV is detected.

Downloads

Download data is not yet available.

References

V.G. Litovchenko, and A.P. Gorban, Fundamentals of Physics of Microelectronic Metal-Semiconductor Systems, (Kyiv, 1978). (in Russian)

S.B. Utamuradova, S.Kh. Daliev, E.M. Naurzalieva, and X.Yu. Utemuratova, “Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy,” East Eur. J. Phys. (3), 430 (2023), https://doi.org/10.26565/2312-4334-2023-3-47

V.F. Kiselev, and S.N. Kozlov, Fundamentals of solid surface physics, (Mir, Moscow, 1999). (in Russian)

Sh.B. Utamuradova, Kh.J. Matchonov, J.J. Khamdamov, and Kh.Y. Utemuratova, “X-ray diffraction study of the phase state of silicon single crystals doped with manganese,” New Materials, Compounds and Applications, 7(2), 93-99 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v7n2/Utamuradova_et_al.pdf

Sh.B. Utamuradova, Sh.Kh. Daliyev, K.M. Fayzullayev, D.A. Rakhmanov, and J.Sh. Zarifbayev, “Raman spectroscopy of defects in silicon doped with chromium atoms,” New Materials, Compounds and Applications, 7(1), 37-43 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V7N1/Utamuradova_et_al.pdf

Y. Nishioka, E. F. Da Silva, Jr., Y. Wang, and T.-P. Ma, “Dramatic Improvement of Hot-Electron-Induced Interface Degradation in MOS Structures Containing F or CI in SiO2,” IEEE Electron Device Letters, 9(1), 38–40 (1988). https://doi.org/10.1109/55.20406

K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and M.B. Bekmuratov, “Structural properties of silicon doped rare earth elements ytterbium,” East Eur. J. Phys. (1), 375–379 (2024). https://doi.org/10.26565/2312-4334-2024-1-37

K.S. Daliev, S.B. Utamuradova, A. Khaitbaev, J.J. Khamdamov, S.B. Norkulov, and M.B. Bekmuratov, “Defective Structure of Silicon Doped with Dysprosium,” East Eur. J. Phys. (2), 283-287 (2024). https://doi.org/10.26565/2312-4334-2024-2-30

S.B. Utamuradova, S.K. Daliev, A.K. Khaitbaev, J.J. Khamdamov, K.J. Matchonov, and X.Y. Utemuratova, “Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods,” East Eur. J. Phys. (2), 274-278 (2024). https://doi.org/10.26565/2312-4334-2024-2-28

S.B. Utamuradova, K.S. Daliev, A.I. Khaitbaev, J.J. Khamdamov, J.S. Zarifbayev, and B.S. Alikulov, “Defect Structure of Silicon Doped with Erbium,” East Eur. J. Phys. (2), 288-292 (2024). https://doi.org/10.26565/2312-4334-2024-2-31

K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and Z.E. Bahronkulov, “Morphology of the Surface of Silicon Doped with Lutetium,” East Eur. J. Phys. (2), 304-308 (2024). https://doi.org/10.26565/2312-4334-2024-2-34

V.V. Emtsev, V.V. Emtsev (Jr.), D.S. Poloskin, N.A. Sobolev, E.I. Shek, J. Mikhel, and L.S. Kimerling, “Impurity centers in silicon doped with rare-earth impurities dysprosium, holmium, erbium and ytterbium,” FTP, 33(6), 649-651 (1999). https://journals.ioffe.ru/articles/viewPDF/3576. (in Russian)

C. Xiao, J. Blundell, F. Hagelberg, and W.A. Lester Jr. “Silicon clusters doped with an yttrium metal atom impurity,” International Journal of Quantum Chemistry, 96(4), 416–425 (2004). https://doi.org/10.1002/qua.10735

Y.B. Andree, G.G. Bondarenko, A.A. Stolyarov, D.S. Basyutin, and A.M. Mikhal’ko, “Influence of High_Field Electron Injection Regimes on Modification of Dielectric Films of MOS DeYb ice,” Inorganic Materials: Applied Research, 1(2), 105–109 (2010).

Charge-Coupled Devices (Topics in Applied Physics), edited by D.F. Barb, (Springer-Verlag, 1980).

S. Gomes, and J. Ziane, “Investigation of electrical degradation of a metal-oxide-silicon structure by scanning thermal microscopy,” Solid-State Electronics, 47, 919-922 (2003). https://doi.org/10.1016/S0038-1101(02)00451-3

Y. Khlifi, K. Kassmi, A. Aziz, F. Olivie, G. Sarrabayrouse, and A. Martinez, “Ionizing Radiation Effect on the Electrical Properties of Metal/Oxide/Semiconductor Structures,” M. J. Condensed Matter, 6(1), 20-26 (2005). https://doi.org/10.34874/PRSM.mjcm-vol6iss0.132

H.S. Daliev, A.A. Lebedev, and V. Ekke, “Effect of heat treatment on the density of radiation defects in the dielectric and on the surface of the semiconductor of silicon MIS structures,” FTP, 21(5), 836-841 (1987).

H.S. Daliev, A.A. Lebedev, and V. Ekke, “Study of electrophysical properties of silicon MIS structures irradiated with γ-quanta in the presence of an electric field in the dielectric,” FTP, 21(1), 23-29 (1987).

K.P. Abdurakhmanov, Kh.S. Daliev, Sh.B. Utamuradova, and N.Kh. Ochilova, “On defect formation in silicon with impuritiesof manganese and zinc,” Applied Solar Energy (English translation of Geliotekhnika), 34(2), 73–75 (1998).

Sh.B. Utamuradova, Sh.Kh. Daliev, A.V. Stanchik, and D.A. Rakhmanov, “Raman spectroscopy of silicon, doped with platinum and irradiated by protons”, E3S Web of Conferences, 402, 14014 (2023). https://doi.org/10.1051/e3sconf/202340214014

A.S. Zakirov, Sh.U. Yuldashev, H.D. Cho, J.C. Lee, T.W. Kang, J.J. Khamdamov, and A.T. Mamadalimov, “Functional Hybrid Materials Derived from Natural Cellulose,” Journal of the Korean Physical Society, 60(10), 1526-1530 (2012). https://doi.org/10.3938/jkps.60.1526

Published
2024-12-08
Cited
How to Cite
Daliev, K. S., Utamuradova, S. B., Khamdamov, J. J., Bekmuratov, M., Yusupov, O. N., Norkulov, S. B., & Matchonov, K. J. (2024). Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium. East European Journal of Physics, (4), 301-304. https://doi.org/10.26565/2312-4334-2024-4-33
Issue
No. 4 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov, Mansur B. Bekmuratov, Oralbay N. Yusupov, Shahriyor B. Norkulov, Khusniddin J. Matchonov

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Authors who publish with this journal agree to the following terms:

    • Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
    • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
    • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).

Most read articles by the same author(s)

1 2 > >>