Morphology of the Surface of Silicon Doped with Lutetium

  • Khodjakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan
  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Jonibek J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Zavkiddin E. Bahronkulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
Keywords: Silicon, Lutetium, Access, Doping, Defect, Diffusion, Oxygen, Carbon, SEM, AFM


In this paper, using a scanning electron microscope (SEM) and atomic analysis, the location map of microcomposites formed on the surface of n-Si, p-Si, n-Si<Lu> and p-Si<Lu> samples was studied. Force microscope (AFM) research devices. The atomic fractions of inclusions of carbon, oxygen and lutetium formed on the surface of the samples were studied. Also, using the ASM device, the sizes, relief and topographic appearance of defects formed on the surface of the samples were determined. In silicon samples doped with Lu, a decrease in the size of surface defects and the formation of nano-sized structures were found, which makes it possible to obtain materials with a more perfect crystal structure. Using a ZEISS GeminiSEM 300 scanning electron microscope, the structural structure, chemical composition and images of their arrangement of n-Si, p-Si, n-Si<Lu> and p-Si<Lu> samples were obtained. In this case, the electron accelerating voltage was 20 kV, and the pressure in the sample chamber was (10-3 mmHg). Research results show that the structural structure of micro- and nanocomposites formed in silicon mainly depends on the diffusion time and cooling rate of the samples after diffusion annealing.


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How to Cite
Daliev, K. S., Utamuradova, S. B., Khamdamov, J. J., & Bahronkulov, Z. E. (2024). Morphology of the Surface of Silicon Doped with Lutetium. East European Journal of Physics, (2), 304-308.

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