Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

  • Khodjakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan https://orcid.org/0000-0002-2164-6797
  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Jonibek J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Mansur Bekmuratov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0006-3061-1568
  • Oralbay N. Yusupov Nukus State Pedagogical Institute named after Ajiniyaz, Nukus, Uzbekistan https://orcid.org/0009-0005-8419-2293
  • Shahriyor B. Norkulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-2171-4884
  • Khusniddin J. Matchonov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-8697-5591
DOI: https://doi.org/10.26565/2312-4334-2024-4-33
Keywords: Silicon, Substrate, Impurity, Rare Earth element, Diffusion, Doping, Ytterbium, MIS structure

Abstract

The characteristics of silicon MIS structures with ytterbium impurity are studied using non-stationary capacitance spectroscopy of deep levels. It is established that the presence of ytterbium atoms in the bulk of the silicon substrate leads to a shift in the capacitance-voltage characteristics towards positive bias voltages and a decrease in the density Nss of the surface states of the MIS structures. It is shown that this effect depends on the concentration of ytterbium atoms in the silicon substrate of the studied structures. In MIS structures based on Si<Yb>, one deep level with an ionization energy Ec-0.32 eV is detected.

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Published
2024-12-08
Cited
How to Cite
Daliev, K. S., Utamuradova, S. B., Khamdamov, J. J., Bekmuratov, M., Yusupov, O. N., Norkulov, S. B., & Matchonov, K. J. (2024). Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium. East European Journal of Physics, (4), 301-304. https://doi.org/10.26565/2312-4334-2024-4-33
Issue
No. 4 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov, Mansur B. Bekmuratov, Oralbay N. Yusupov, Shahriyor B. Norkulov, Khusniddin J. Matchonov

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