X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons
Abstract
In this work, the effect of proton irradiation on the change in the structure of silicon samples doped with platinum was studied. The samples were irradiated with protons at a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 μA. To determine the change in the structure after irradiation, the methods of X-ray diffraction and atomic force microscopy were used. The obtained results indicate that doping with platinum does not lead to a modification of the cubic crystal structure of silicon, but only to minor changes in the structural characteristics and surface morphology. In this case, proton irradiation of a silicon single crystal with a dose of 9.0×1014 cm–2 with an energy of 600 keV leads to the formation of defects without the formation of an amorphous near-surface layer.
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References
N.M. Bogatov, L.R. Grigorian, A.I. Kovalenko, et al. Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures. Semiconductors, 54, 196 (2020). https://doi.org/10.1134/S1063782620020062
Sh.B. Utamuradova, Sh.Kh.Daliev, K.M. Fayzullaev , D.A. Rakhmanov, and J.Sh. Zarifbayev. , “New materials, compounds and applications,” 7(1), 37-43 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V7N1/Utamuradova_et_al.pdf
Sh.B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich, I.G. Genov, Z. Slavkova, and M.N. Ilyina, Advanced Physical research, 5(1), 5 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/APR/V5N1/Utamuradova_et_al.pdf
V.V. Kozlovsky, V.A. Kozlov, and V.N. Lomasov, FTP, 34(2), 129 (2000). http://journals.ioffe.ru/articles/viewPDF/37060
B.I. Boltaks, Diffusion in semiconductors, (State publishing house of physical and mathematical literature, Moscow, 1971).
Sh.B. Utamuradova, A.V. Stanchik, D.A. Rakhmanov, A.S. Doroshkevich, and K.M. Fayzullaev, “New materials, compounds and applications,” 6(3), 214 (2022). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V6N3/Utamuradova_et_al.pdf
Sh.B. Utamuradova, S.A. Muzafarova, A.M. Abdugofurov, K.M. Fayzullaev, E.M. Naurzalieva, and D.A. Rakhmanov, Applied Physics, 4, 90 (2021). https://applphys.orion-ir.ru/appl-21/21-4/PF-21-4-81.pdf (in Russian)
Sh.B. Utamuradova, and D.A. Rakhmanov, Annals of University of Craiova, Physics, 32, 132 (2022). https://cis01.central.ucv.ro/pauc/vol/2022_32/15_PAUC_2022_132_136.pdf
Y.S. Katharria, S. Kumar, F. Singh, J.C. Pivin, and D. Kanjilal, J. Phys. D: Appl. Phys. 39, 3969 (2006). https://dx.doi.org/10.1088/0022-3727/39/18/007
https://www.xtal.iqfr.csic.es/Cristalografia/parte_05-en.html
S.A. Speakman, Fundamentals of Rietveld Refinement.
I.S. Smirnovn, I.G. Dyachkovan, E.G. Novoselova, Modern Electronic Materials, 2, 29 (2016). http://dx.doi.org/10.1016/j.moem.2016.08.005
O.V. Skaliaukh, “Defect formation in silicon upon irradiation with alpha particles with an energy of 5.4 MeV”, Ph.D. Thesis, Ulyanovsk, 2005.
V.A. Zinoviev, “Processes on the silicon surface under low-energy ion exposure under conditions of molecular-beam epitaxy,” Thesis, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics. Novosibirsk, 2004.
S.M. Osadchii, A.A. Petukhov, and V.B. Dunin, J. Surf. Investig. 13, 690 (2019). https://doi.org/10.1134/S1027451019040311
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