Investigation of the Magnetic Properties of Silicon Doped with Rare-Earth Elements

  • Khodjakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan
  • Zavkiddin E. Bahronkulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Jonibek J. Hamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
Keywords: silicon, lutetium, rare earth elements, magnetoresistive, diffusion, magnetic field, temperature


This article discusses the electrical properties of silicon doped with rare earth elements (REE). Atoms of rare earth elements (REE) diffused onto the surface of the silicon substrate. To measure the electrical parameters, samples of n-Si, n-Si<Lu>, n-Si<Er> and n-Si<Gd> were prepared and their electrical properties were determined using the Hall effect, four-probe and thermal probe methods. The studies were carried out in the temperature range 77÷300 K. The samples were ohmically contacted using a mixture of 1% Sb + 99% Au for measurement on the HMS500 instrument. The specific resistance of the samples in layers, the concentration of charge carriers, and the mobility of the samples were also studied by the magnetoresistance method. The electrical parameters of the samples were measured on an Ecopia Hall effect measuring system (HMS5000).


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How to Cite
Daliev, K. S., Bahronkulov, Z. E., & Hamdamov, J. J. (2023). Investigation of the Magnetic Properties of Silicon Doped with Rare-Earth Elements. East European Journal of Physics, (4), 167-171.

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