Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

  • Khodjakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan https://orcid.org/0000-0002-2164-6797
  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Zavkiddin E. Bahronkulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0002-9843-8344
  • Alisher Kh. Khaitbaev National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-9892-8189
  • Jonibek J. Hamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
DOI: https://doi.org/10.26565/2312-4334-2023-4-23
Keywords: Silicon, Lutetium, Raman spectroscopy, Diffusion, Doping, Temperature

Abstract

In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si<Lu> and p-Si<Lu>), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands.

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References

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Published
2023-12-02
Cited
How to Cite
Daliev, K. S., Utamuradova, S. B., Bahronkulov, Z. E., Khaitbaev, A. K., & Hamdamov, J. J. (2023). Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu&gt; Raman Spectrometer Methods. East European Journal of Physics, (4), 193-196. https://doi.org/10.26565/2312-4334-2023-4-23
Issue
No. 4 (2023): East European Journal of Physics
Section
Original Papers

Copyright (c) 2023 Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov, Alisher Kh. Khaitbaev, Jonibek J. Hamdamov

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