Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Shakhrukh Kh. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Alisher Kh. Khaitbaev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Jonibek J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Khusniddin J. Matchonov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-8697-5591
  • Xushnida Y. Utemuratova Karakalpak State University, Nukus, Karakalpakstan
Keywords: Silicon, Holmium, Rare Earth Elements, Raman Spectra, Diffusion, Heat Treatment, Defects

Abstract

Each crystal structure has its own phonon modes, which appear in the Raman spectrum of Raman scattering. In the case of silicon, phonon modes associated with the diamond structure of silicon can be detected. In a Raman spectrum, the position of the lines, their intensity, and the width of the lines are usually measured. Raman spectroscopy is a powerful tool for studying crystalline materials at the molecular level, and its application in the study of semiconductors and nanomaterials provides important information about their structure and properties. In this study, the spectra of two types of silicon were analyzed: n-Si and p-Si, as well as their doped analogues n-Si<Ho> and p-Si<Ho>. The obtained Raman imaging results demonstrated spatially varying nanocrystallinity and microcrystallinity of the samples. The n-Si<Ho> and p-Si<Ho> spectra indicate the appearance of a Raman band at 525 cm-1 with a shift of -5 cm-1 and +5 cm-1, respectively, relative to the position of the silicon substrate peak, indicating the presence of tensile strain in the materials. The absence of other impurity peaks indicates the high purity of the n-Si<Ho> and p-Si<Ho> samples. The holmium doped Si material exhibits additional peaks in the Raman spectra, which is attributed to the presence of vacancies and defects in the newly formed Si-Ho compositions. The results of the analysis of the spectra indicate the influence of doping silicon with holmium on its structure and properties, forming new bonds and defects.

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References

Sh.B. Utamuradova, Kh.J. Matchonov, J.J. Khamdamov, and Kh.Y. Utemuratova, “X-ray diffraction study of the phase state of silicon single crystals doped with manganese,” New Materials, Compounds and Applications, 7(2), 93-99 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v7n2/Utamuradova_et_al.pdf

Y. Inoue, S. Nakashima, A. Mitsuishi, T. Nishimura, and Y. Akasaka, “The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe,” Jpn. J. Appl. Phys. 25, 798–801 (1986). https://doi.org/10.1143/JJAP.25.798

Sh.B. Utamuradova, Sh.Kh. Daliev, D.A. Rakhmanov, S.F. Samadov, and A.S. Doroshkevich, “Investigation of radiation defect formation of irradiated n-Si,” Advanced Physical Research, 5(3), 183-191 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/APR/V5N3/7.Utamuradova.pdf

Sh.B. Utamuradova, Sh.Kh.Daliev, A.V. Stanchik, D.A. Rakhmanov, “Raman spectroscopy of silicon, doped with platinum and irradiated by protons”, E3S Web of Conferences, 402, 14014(2023). https://doi.org/10.1051/e3sconf/202340214014

Z.T. Azamatov, Sh.B.Utamuradova, M.A. Yuldoshev, N.N. Bazarbayev, “Some properties of semiconductor-ferroelectric structures”, East European Journal of Physics, 2, 187–190(2023). https://doi.org/10.26565/2312-4334-2023-2-19

Daliev, Kh.S., Utamuradova, Sh.B., Khamdamov, J.J. & Bahronkulov, Z.E. (2024). Electrophysical properties of silicon doped with lutetium. Advanced Physical Research, 6(1), 42-49 https://doi.org/10.62476/apr61.49

V. A. Volodin, M. D. Efremov, and V. A. Gritsenko, “Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films,” Solid State Phenom. 57-58, 501–506 (1997). https://doi.org/10.4028/www.scientific.net/SSP.57-58.501

Sh.B.Utamuradova, Z.T. Azamatov, M.A. Yuldoshev, “Optical Properties of ZnO–LiNbO3 and ZnO–LiNbO3:Fe Structures”, Russian Microelectronics, 52, 99–103(2023). https://doi.org/10.1134/S106373972360022X

H. Xia, Y.L. He, L.C. Wang, W. Zhang, X.N. Liu, X.K. Zhang, D. Feng, and H.E. Jackson, “Phonon mode study of Si nanocrystals using micro‐Raman spectroscopy,” J. Appl. Phys. 78, 6705–6708 (1995). https://doi.org/10.1063/1.360494

Z. Iqbal, and S. Veprek, “Raman scattering from hydrogenated microcrystalline and amorphous silicon,” J. Phys. C, 15, 377 (1982). https://doi.org/10.1088/0022-3719/15/2/019

J. Gonzales-Hernandez, G.H. Azarbayejani, R. Tsu, and F.H. Pollak, “Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study,” Appl. Phys. Lett. 47, 1350 (1985). https://doi.org/10.1063/1.96277

I.H. Campbell, and P.M. Fauchet, “The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors,” Solid State Commun. 52, 739 (1986). https://doi.org/10.1016/0038-1098(86)90513-2

J.E. Smith, Jr., M.H. Brodsky, B.L. Crowder, M.I. Nathan, and A. Pinczuk, “Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors,” Phys. Rev. Lett. 26, 642 (1971). https://doi.org/10.1103/PhysRevLett.26.642

Kh.S. Daliev, Sh.B. Utamuradova, Z.E. Bahronkulov, A.Kh. Khaitbaev, and J.J. Hamdamov, “Structure Determination and Defect Analysis n-Si, p-Si Raman Spectrometer Methods,” East Eur. J. Phys. 4, 193 (2023). https://doi.org/10.26565/2312-4334-2023-4-23

P.A. Temple, and C.E. Hathaway, “Multiphonon Raman spectrum of silicon,” Physical Review B, 7(8), 3685–3697 (1973). https://doi.org/10.1103/PhysRevB.7.3685

Sh.B. Utamuradova, Sh.Kh. Daliev, E.M. Naurzalieva, X.Yu. Utemuratova, “Investigation of defect formation in silicon doped with silver and gadolinium impurities by raman scattering spectroscopy”, East European Journal of Physics, 3, 430–433(2023). https://doi.org/ 10.26565/2312-4334-2023-3-47

K.J. Kingma, and R.J. Hemley, “Raman spectroscopic study of microcrystalline silica,” American Mineralogist, 79(3-4), 269 273 (1994). https://pubs.geoscienceworld.org/msa/ammin/article-pdf/79/3-4/269/4209223/am79_269.pdf

G.E. Walrafen, Y.C. Chu, and M.S. Hokmabadi, “Raman spectroscopic investigation of irreversibly compacted vitreous silica,” The Journal of Chemical Physics, 92(12), 6987–7002 (1990). https://doi.org/10.1063/1.458239

B. Champagnon, C. Martinet, M. Boudeulle, D. Vouagner, C. Coussa, T. Deschamps, and L. Grosvalet, “High pressure elastic and plastic deformations of silica: in situ diamond anvil cell Raman experiments,” Journal of Non-Crystalline Solids, 354(2-9), 569–573 (2008). https://doi.org/10.1016/j.jnoncrysol.2007.07.079

Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Daliev, S. K., Khaitbaev, A. K., Khamdamov, J. J., Matchonov, K. J., & Utemuratova, X. Y. (2024). Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods. East European Journal of Physics, (2), 274-278. https://doi.org/10.26565/2312-4334-2024-2-28

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