On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

  • Shakhrukh Kh. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • Fayzulla A. Saparov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0001-4291-1334
Keywords: MDS structure, silicon, transition layer, interface, , temperature, dielectric layer


Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to over-barrier charge emission or thermal ionization of impurity centers.


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How to Cite
Daliev, S. K., & Saparov, F. A. (2023). On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures. East European Journal of Physics, (4), 206-209. https://doi.org/10.26565/2312-4334-2023-4-25

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