Defect Structure of Silicon Doped with Erbium

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Khojakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan https://orcid.org/0000-0002-2164-6797
  • Alisher I. Khaitbaev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-9892-8189
  • Jonibek J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Jasur Sh. Zarifbayev Uzbek State University of Physical Education and Sport, Uzbekistan https://orcid.org/0000-0001-9892-8189
  • Bekzod Sh. Alikulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
DOI: https://doi.org/10.26565/2312-4334-2024-2-31
Keywords: Silicon, Erbium, Rare Earth Element, Raman Spectroscopy, Diffusion, Heat Treatment, Temperature, Structure, X-Ray Phase Analysis, Film

Abstract

The study of thin-film nanocomposites, including crystalline and amorphous silicon nanoparticles embedded in silicon oxide layers, is a key direction in the field of materials for optoelectronics. This study explored the interest in such composites, including erbium silicide (ErSi2-x), in the context of their applications in non-volatile memory and photovoltaic devices. Particular attention was paid to the structure and properties of such materials, including the analysis of defects in erbium-doped silicon. The results of the study, based on Raman spectroscopy and X-ray phase analysis, made it possible to identify the characteristics of the composition and structure of the studied samples. The identified data confirmed the presence of crystalline phases of Si and Er in the p-Si-Er composite, and also showed the substitution of Er in the p-Si/SiO2 structure. Additionally, X-ray microanalysis data confirmed the presence of Si, O and Er in the expected concentrations in the composite film. Further research showed that the introduction of erbium atoms onto the silicon surface leads to minor changes in some signals and the appearance of new vibrations in the Raman spectra of the samples. The decrease in the intensity of the peaks belonging to silicon is associated with the weakening and breaking of some bonds in the structure of the silicon crystal lattice and due to the formation of new bonds in which erbium atoms participate. Thus, the results of this study represent a significant contribution to the understanding of the properties and potential of thin film nanocomposites for applications in optoelectronics, and also enrich our knowledge of the effect of doping on the structure and properties of silicon materials.

Downloads

Download data is not yet available.

References

I.P. Lisovskyi, A.V. Sarikov, and M.I. Sypko, Thin film structures with silicon nanoinclusions, (Knigi-XXI, Kyiv-Chernivci, 2014). (in Ukrainian)

M. Sopinskyy, and V. Khomchenko, “Electroluminescence in SiOx films and SiOx-film-based systems,” Current opinion in solid state & materials science, 7(2), 97-109 (2003). https://doi.org/10.1016/S1359-0286(03)00048-2

J. Kedzierski, P. Xuan, E. Anderson, J. Boker, T. King, and C. Hu, “Complementary silicide source/drain thin-body MOSFETs for the 20-nm gate-length regime,” in: International Electron Devices Meeting 2000. Technical Digest. IEDM, (2000), pp. 57 60. https://doi.org/10.1109/IEDM.2000.904258

M. Jang, J. Oh, S. Maeng, W. Cho, S. Lee, K. Kang, and K. Park, “Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors,” Appl. Phys. Lett. 83, 2611 (2003). https://doi.org/10.1063/1.1614441

S. Kennou, S. Ladas, M.G. Gimaldi, T.A.N. Tan, and J.Y. Veuillen, “Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon,” Appl. Surf. Sci. 102, 142-146 (1996). https://doi.org/10.1016/0169-4332(96)00034-7

Kh.S. Daliev, Sh.B. Utamuradova, J.J. Khamdamov, and Z.E. Bahronkulov, “Electrophysical properties of silicon doped with lutetium,” Advanced Physical Research, 6(1), 42-49 (2024). https://doi.org/10.62476/apr61.49

K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and M. B. Bekmuratov, “Structural Properties of Silicon Doped Rare Earth Elements Ytterbium,” East European Journal of Physics, (1), 375-379 (2024). https://doi.org/10.26565/2312-4334-2024-1-37

P.A. Temple, and C.E. Hathaway, “Multiphonon Raman Spectrum of Silicon,” Physical Review B, 7(8), 3685 (1973). https://doi.org/10.1103/physrevb.7.3685

K. Uchinokura, T. Sekine, and E. Matsuura, “Critical-point analysis of the two-phonon Raman spectrum of silicon,” Journal of Physics and Chemistry of Solids, 35(2), 171–180 (1974). https://doi.org/10.1016/0022-3697(74)90031-6

I. Iatsunskyi, G. Nowaczyk, S. Jurga, V. Fedorenko, M. Pavlenko, and V. Smyntyna, “Optik- International Journal for Light and Electron Optics,” 126(18), 1650-1655 (2015). https://doi.org/doi:10.1016/j.ijleo.2015.05.088

A. Wellner, V. Paillard, H. Coffin, N. Cherkashin, and C. Bonafos, “Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate,” Journal of Applied Physics, 96(4), 2403-2405 (2004). https://doi.org/10.1063/1.1765853

Sh.B. Utamuradova, A.V. Stanchik, K.M. Fayzullaev, B.A. Bakirov, Applied Physics, 2, 33–38 (2022). (in Russian)

C. Smit, R.A.C.M.M. van Swaaij, H. Donker, A.M.H.N. Petit, W.M.M. Kessels, M.C.M. van de Sanden, “Determining the material structure of microcrystalline silicon from Raman spectra,” Journal of Applied Physics, 94(5), 3582 (2003). https://doi.org/doi:10.1063/1.1596364

B. Graczykowski, A. El Sachat, J.S. Reparaz, M. Sledzinska, M.R. Wagner, E. Chavez-Angel, and C.M.S. Torres, “Thermal conductivity and air-mediated losses in periodic porous silicon membranes at high temperatures,” Nature Communications, 8(1), 415 (2017). https://doi.org/10.1038/s41467-017-00115-4

J.C. Tsang, Y. Yokota, R. Matz, and G. Rubloff, “Raman spectroscopy of PtSi formation at the Pt/Si(100) interface,” Applied Physics Letters, 44(4), 430 (1984). https://doi.org/10.1063/1.94755

R.J. Nemanich, C.C. Tsai, B.L. Stafford, J.R. Abelson, and T.W. Sigmon, “Initial Phase Formation at the Interface of Ni, Pd, or Pt and Si,” MRS Proceedings, 25, 9 (1984). https://doi.org/10.1557/proc-25-9

J.E. Smith, M.H. Brodsky, B.L. Crowder, M.1. Nathan, and A. Pinczuk, “Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors,” Phys. Rev. Lett. 26, 642 (1971). https://doi.org/10.1103/PhysRevLett.26.642

Kh.S. Daliev, Sh.B. Utamuradova, Z.E. Bahronkulov, A.Kh. Khaitbaev, and J.J. Hamdamov, “Structure Determination and Defect Analysis n-Si, p-Si Raman Spectrometer Methods,” East Eur. J. Phys. 4, 193 (2023). https://doi.org/10.26565/2312-4334-2023-4-23

M.A. Va’squez, G.A. Rodriguez, G.P. Garcia-Saldago, G. Romeo-Paredes, and R. Pena-Sierra, “FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions,” Revista Mexicana De Fisica, 6, 431 (2007). https://www.redalyc.org/pdf/570/57053601.pdf

M. Bosca, L. Pop, G. Borodi, P. Pacuta, and E, Culea, “XRD and FTIR structural investigations of erbium-doped bismuth–lead–silver glasses and glass ceramics,” Journal of Alloys and Compound, 479, 579 (2009). https://doi.org/10.1016/j.jallcom.2009.01.001

B. Shokri, and M.A. Firouzjah, and S.I. Hosseini, “FTIR analysis of silicon dioxide thin film deposited by Metal organic-based PECVD,” in: Proceedings of 19th International Symposium on Plasma Chemistry Society. (IPCS, 2009).

N.B. Singh, and U. Sarkar, “Structure, vibrational, and optical properties of platinum cluster: a density functional theory approach,” J. Mol. Model. 20, 2537 (2014). https://doi.org/10.1007/s00894-014-2537-5

K.D.A. Kumar, S. Valanarasu, A. Kathalingam, and V. Ganesh, “Effect of solvents on sol–gel spin-coated nanostructured Al-doped ZnO thin films: a film for key optoelectronic applications,” Appl. Phys. A, 123(12), 801 (2017). https://doi.org/10.1007/s00339-017-1426-z

K.D.A. Kumar, S. Valanarasu, A. Kathalingam, and K. Jeyadheepan, “Nd3+ Doping effect on the optical and electrical properties of SnO2 thin films prepared by nebulizer spray pyrolysis for opto-electronic application,” Mater. Res. Bull. 101, 264 (2018). https://doi.org/10.1016/j.materresbull.2018.01.050

J.A. Knapp, and S.T. Picraux, “Epitaxial growth of rare‐earth silicides on (111) Si,” Appl Phys Lett. 48, 466-468 (1986). https://doi.org/10.1063/1.96532

S.S. Lau, C.S. Pai, C.S. Wu, T.F. Kuech, and B.X. Liu, “Surface morphology of erbium silicide,” Appl. Phys. Lett. 41, 77-80 (1982). https://doi.org/10.1063/1.93295

G.H. Shen, J.C. Chen, C.H. Lou, S.L. Cheng, and L.J. Chen, “The growth of pinhole-free epitaxial DySi2-x films on atomically clean Si(111),” J. Appl. Phys. 84, 3630-3635 (1998). https://doi.org/10.1063/1.368538

Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Daliev, K. S., Khaitbaev, A. I., Khamdamov, J. J., Zarifbayev, J. S., & Alikulov, B. S. (2024). Defect Structure of Silicon Doped with Erbium. East European Journal of Physics, (2), 288-292. https://doi.org/10.26565/2312-4334-2024-2-31
Issue
No. 2 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Sharifa B. Utamuradova, Khojakbar S. Daliev, Alisher I. Khaitbaev, Jonibek J. Khamdamov, Jasur Sh. Zarifbayev, Bekzod Sh. Alikulov

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Authors who publish with this journal agree to the following terms:

    • Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
    • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
    • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).

Most read articles by the same author(s)

1 2 > >>