Structural Features of Silicon with Tin Impurity

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Bakhodir B. Bokiyev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Dilorom S. Pulatova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
DOI: https://doi.org/10.26565/2312-4334-2024-2-42
Keywords: Silicon, Tin, X-ray diffraction, Subcrystallite crystal lattice, Nanocrystallite

Abstract

In this work, samples of single-crystalline silicon doped with tin were studied using X-ray diffraction and electron microscopy. It has been established that at a scattering angle of 2θ » 36.6° in the X-ray diffraction patterns of n-Si and Si<Sn> samples, structural reflections (110) of the corresponding SiO2 nanocrystallites with lattice parameters a = b = 0,4936 нм и c = 0,5212 nm and c = 0.5212 nm, belonging to the hexagonal crystal lattice and space group P321. The formation of tin nanocrystallites with sizes of 9.1 and 8 nm in the near-surface regions of the Si<Sn> matrix crystal lattice was discovered.

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Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Bokiyev, B. B., & Pulatova, D. S. (2024). Structural Features of Silicon with Tin Impurity. East European Journal of Physics, (2), 353-357. https://doi.org/10.26565/2312-4334-2024-2-42
Issue
No. 2 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Sharifa B. Utamuradova, Bakhodir B. Bokiyev, Dilorom S. Pulatova

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