Defect Structure of Silicon Doped with Erbium

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Khojakbar S. Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan https://orcid.org/0000-0002-2164-6797
  • Alisher I. Khaitbaev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-9892-8189
  • Jonibek J. Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Jasur Sh. Zarifbayev Uzbek State University of Physical Education and Sport, Uzbekistan https://orcid.org/0000-0001-9892-8189
  • Bekzod Sh. Alikulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
DOI: https://doi.org/10.26565/2312-4334-2024-2-31
Keywords: Silicon, Erbium, Rare Earth Element, Raman Spectroscopy, Diffusion, Heat Treatment, Temperature, Structure, X-Ray Phase Analysis, Film

Abstract

The study of thin-film nanocomposites, including crystalline and amorphous silicon nanoparticles embedded in silicon oxide layers, is a key direction in the field of materials for optoelectronics. This study explored the interest in such composites, including erbium silicide (ErSi2-x), in the context of their applications in non-volatile memory and photovoltaic devices. Particular attention was paid to the structure and properties of such materials, including the analysis of defects in erbium-doped silicon. The results of the study, based on Raman spectroscopy and X-ray phase analysis, made it possible to identify the characteristics of the composition and structure of the studied samples. The identified data confirmed the presence of crystalline phases of Si and Er in the p-Si-Er composite, and also showed the substitution of Er in the p-Si/SiO2 structure. Additionally, X-ray microanalysis data confirmed the presence of Si, O and Er in the expected concentrations in the composite film. Further research showed that the introduction of erbium atoms onto the silicon surface leads to minor changes in some signals and the appearance of new vibrations in the Raman spectra of the samples. The decrease in the intensity of the peaks belonging to silicon is associated with the weakening and breaking of some bonds in the structure of the silicon crystal lattice and due to the formation of new bonds in which erbium atoms participate. Thus, the results of this study represent a significant contribution to the understanding of the properties and potential of thin film nanocomposites for applications in optoelectronics, and also enrich our knowledge of the effect of doping on the structure and properties of silicon materials.

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Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Daliev, K. S., Khaitbaev, A. I., Khamdamov, J. J., Zarifbayev, J. S., & Alikulov, B. S. (2024). Defect Structure of Silicon Doped with Erbium. East European Journal of Physics, (2), 288-292. https://doi.org/10.26565/2312-4334-2024-2-31
Issue
No. 2 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Sharifa B. Utamuradova, Khojakbar S. Daliev, Alisher I. Khaitbaev, Jonibek J. Khamdamov, Jasur Sh. Zarifbayev, Bekzod Sh. Alikulov

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