Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Dilmurod A. Rakhmanov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-1275-5999
  • Afsun S. Abiyev Innovation and Digital Development Agency, Baku, Azerbaijan; Khazar University, Baku, Azerbaijan; Western Caspian University, Baku, Azerbaijan https://orcid.org/0009-0009-9377-7567
Keywords: Monocrystal, Silicon, Irradiation, Alpha particles, Proton, Gamma quantum, X-ray diffraction

Abstract

In this work, the influence of alpha particles, protons and gamma rays on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. N-type silicon (KEF-40) was used for the study. The samples were irradiated with protons with a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 µA, irradiated with alpha particles with a dose of 6×1014 cm-2 with an energy of 800 keV and a current of 0.5÷1 µA and γ− 60Co quanta with a flux intensity of ~ 3.2×1012 quantum/cm2·s. Based on the results of X-ray diffraction analysis, it was established that distortions, vacancies and amorphization of lattice parameters that arose after irradiation lead to an increase in lattice parameters.

Downloads

Download data is not yet available.

References

Sh.B. Utamuradova, Sh.Kh. Daliev, D.A. Rakhmanov, S.F. Samadov, and A.S. Doroshkevich, “Investigation of Radiation Defect Formation of Irradiated n-Si,” Advanced Physical research, 5(3), 183-191 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/APR/V5N3/7.Utamuradova.pdf

V.A. Kozlov, and V.V. Kozlovskiy, “Doping of semiconductors with radiation defects when irradiated with protons and alpha particles. Review,” Physics and technology of semiconductors, 35(7), (2001). http://journals.ioffe.ru/articles/viewPDF/37060 (in Russian)

Sh.B. Utamuradova, Sh.Kh. Daliev, A.V. Stanchik, and D.A. Rakhmanov, “Raman spectroscopy of silicon, doped with platinum and irradiated by protons,” E3S Web of conferences, 402, 14014 (2023). https://doi.org/10.1051/e3sconf/202340214014

Sh.B. Utamuradova, Sh.Kh. Daliev, D.A. Rakhmanov, A.S. Doroshkevich, V.A. Kinev, O.Yu. Ponamareva, et al., “IR spectroscopy of n-Si irradiated with protons,” Advanced Physical research, 5(2), 73-80 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/APR/V5N2/Utamuradova_et_al.pdf

N.A. Turgunov, E.Kh. Berkinov, and D.X. Mamajonova, “Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure,” Journal of Nano- and Electronic Physics, 13(5), 05006 (2021). https://doi.org/10.21272/jnep.13(5).05006

Sh.B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich, I.G. Genov, P.L. Tuan, and А. Kirillov, “Processes of defect formation in silicon diffusionally doped with platinum and irradiated with protons,” Eurasian physical technical journal, 20(3), 35-42 (2023). https://doi.org/10.31489/2023No3/35-42

Sh.B. Utamuradova, A.V. Stanchik, and D.A. Rakhmanov, “X-Ray Structural Investigations Of n-Si Irradiated with Protons,” East Eur. J. Phys. 2, 201 (2023). https://doi.org/10.26565/2312-4334-2023-2-21

Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, and A.B. Bakhromov, Physics AUC, 33, 139-145 (2023). https://cis01.central.ucv.ro/pauc/vol/2023_33/13_PAUC_2023_139_145.pdf

R. Jenkins, X-ray Techniques: Overview in Encyclopedia of Analytical Chemistry, edited by R.A. Meyers (John Wiley & Sons Ltd, Chichester, 2000).

Sh.B. Utamuradova, A.V. Stanchik, D.A. Rakhmanov, A.S. Doroshkevich, and K.M. Fayzullaev, “X-ray structural analysis of n-Si, irradiated with alpha particles,” New materials, compounds and applications, 6(3), 214 (2022). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V6N3/Utamuradova_et_al.pdf

H.M. Rietveld. “A Profile Refinement Method for Nuclear and Magnetic Structures,” J. Appl. Cryst. 2, 65 (1969). https://doi.org/10.1107/s0021889869006558

S. Stefanoski, M.C. Blosser, and G.S. Nolas, “Pressure Effects on the Size of Type-I and Type-II Si-Clathrates Synthesized by Spark Plasma Sintering,” Crystal Growth & Design, 13, 195 (2013). https://doi.org/10.1021/cg3013443

A.S. Abiyev, E.M. Huseynov, and R.F. Hashimov, “Gamma radiation-induced alterations in nanocrystalline titanium nitride (TiN) particles: A structural perspective,” Radiation Physics and Chemistry, 218, 111638 (2024). https://doi.org/10.1016/j.radphyschem.2024.111638

S.F. Samadov, A.S. Abiyev, A.G. Asadov, N.V.M. Trung, A.A. Sidorin, O.A. Samedov, E.P. Popov, et al., “Investigating the crystal structure of ZrB2 under varied conditions of temperature, pressure, and swift heavy ion irradiation,” Ceramics International, 50(2), Part B, 3727-3732 (2023). https://doi.org/10.1016/j.ceramint.2023.11.125

O.V. Skalyauh, Ph.D. Thesis, Ulyanovsk, (2005). https://www.dissercat.com/content/defektoobrazovanie-v-kremnii-pri-obluchenii-alfa-chastitsami-s-energiei-54-mev

N.M. Bogatov, L.R. Grigorian, A.I. Kovalenko, F.A. Kolokolov, and L.S. Lunin, “Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83K on the Characteristics of Silicon Photoelectric Structures,” Semiconductors, 54, 196 (2020). https://doi.org/10.1134/S1063782620020062

Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Rakhmanov, D. A., & Abiyev, A. S. (2024). Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si. East European Journal of Physics, (2), 380-383. https://doi.org/10.26565/2312-4334-2024-2-47

Most read articles by the same author(s)

1 2 > >>