Defective Structure of Silicon Doped with Dysprosium
Abstract
In this work, the structural and optical characteristics of silicon (n-Si) samples and its compositions with dysprosium (n-Si-Dy) were analyzed using Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy methods. Characteristic peaks in the FTIR spectra such as 640 cm-1 (Si-H mode) and 1615 cm-1 (perpendicular stretching mode) were identified, indicating the structural features of the material. The appearance of additional peaks in the n-Si-Dy spectra at 516.71 cm-1 and 805 cm-1 indicates the influence of dysprosium on the structure and defectiveness of the material. Examination of the frequency range (1950–2250 cm-1) further confirms local vibration modes associated with defects and interactions with dysprosium. Peaks associated with Dy-Dy stretching, as well as interaction with silicon, were found at 2110 cm-1 and 2124 cm-1. Analysis of Raman spectra indicates the formation of silicon nanocrystals during annealing, which is confirmed by XRD results. The results obtained provide important insight into the effect of dysprosium on the structure and properties of silicon materials, which could potentially find application in optoelectronics and materials science.
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