Influence of Gold on Structural Defects of Silicon

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Shakhrukh Kh. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • Alisher Khaitbaev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-9892-8189
  • Jonibek Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
  • Ulugbek M. Yuldoshev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0003-7575-7497
  • Anifa D. Paluanova Nukus State Pedagogical Institute named after Ajiniyaz, Nukus, Uzbekistan https://orcid.org/0009-0007-7283-5604
Keywords: Silicon, Gold, Raman spectroscopy, Infrared spectroscopy, Diffusion, Scanning electron microscopy, Heat treatment, Temperature, Compound

Abstract

In this research, a comprehensive study of the effect of doping silicon with gold on the optical properties and morphology of silicon layers was carried out. For this purpose, the methods of Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM) were used. The results of the study showed that the transition from original silicon to gold-doped silicon leads to significant changes in the optical properties and morphology of the layers. Raman spectra showed characteristic peaks in the regions of 144, 304, 402, 464, 522, 948 and 973 cm–1, associated with the violation of long-range order of the crystal lattice and the interaction of gold with silicon. The intensity and position of the peaks in the spectra allowed us to draw conclusions about structural changes, including a decrease in crystallinity and the formation of amorphous and nanocrystalline structures in the samples after treatment at 1373 K. New peaks in the Raman spectra associated with Au-Au stretching and the formation of new bonds Si-Au, confirm the processes in silicon layers when alloyed with gold. SEM studies provided information on the structure, chemical composition and arrangement of n-Si-Au and p-Si-Au samples. The spherical arrangement of gold atoms on the surface of single-crystalline silicon was experimentally established, which indicates the diffusion of gold and the formation of gold silicate, which introduces a positive charge to the interface. Morphological changes included an increase in the number of agglomerates with nanocrystals smaller than 7–9 nm and an increase in the transparency of the layer. These results indicate the possibility of improving the photosensitivity of heterostructures with a Si–Au composite layer due to the quantum-size and plasmonic effects of inclusions containing silicon and gold nanoparticles.

Downloads

Download data is not yet available.

References

A. Herz, D. Wang, R. Müller, and P. Schaaf, “Formation of supersaturated Au–Ni nanoparticles via dewetting of an Au/Ni bilayer,” Mater. Lett. 102-103, 22–25 (2013). https://doi.org/10.1016/j.matlet.2013.03.096

M. Sang, K. Kang, Y. Zhang, H. Zhang, K. Kim, M. Cho, J. Shin, J.H. Hong, T. Kim, Sh.K. Lee, W.H. Yeo, J.W. Lee, T. Lee, B. Xu, and K.J. Yu, “Ultrahigh Sensitive Au-Doped Silicon Nanomembrane Based Wearable Sensor Arrays for Continuous Skin Temperature Monitoring with High Precision,” Adv. Mater. 34(4), 2105865 (2022). https://doi.org/10.1002/adma.202105865

G.R. Moghal, “Chemical-bond model for gold surface states in gold doped silicon/silicon dioxide structures,” Int. J. Electronics, 53(3), 271-279 (1982). https://doi.org/10.1080/00207218208901509

W.R. Thurber, D.C. Lewis, and W.M. Buillis, “Resistivity and carrier life time in gold - doped silicon,” Electronic Technology Division Institute for Applied Technology National Bureau of Standards Washington, D.C. 20234, (1973). https://nvlpubs.nist.gov/nistpubs/Legacy/IR/nbsir73-128.pdf

S.O. Konorov, H.G. Schulze, M.W. Blades, and R.F.B. Turner, “Silicon−Gold−Silica Lamellar Structures for Sample Substrates That Provide an Internal Standard for Raman Microspectroscopy,” Anal. Chem. 86(19), 9399–9404 (2014). https://doi.org/10.1021/ac501922a

M. Aono, M. Takahashi, H. Takiguchi, Y. Okamoto, N. Kitazawa, and Y. Watanabe, “Thermal annealing of a-Si/Au superlattice thin films,” Journal of Non-Crystalline Solids, 358(17), 2150-2153 (2014). https://doi.org/10.1016/j.jnoncrysol.2011.12.088

K. Fukami, M.L. Chourou, R. Miyagawa, A.M. Noval, T. Sakka, M. Manso-Silván, R.J. Martin-Palma, and Y.H. Ogata, “Gold Nanostructures for Surface-Enhanced Raman Spectroscopy, Prepared by Electrodeposition in Porous Silicon,” Materials, 4, 791-800 (2011). https://doi.org/10.3390/ma4040791

D. Beeman, R. Tsu, and M.F. Thorpe, “Structural information from the Raman spectrum of amorphous silicon,” Phys. Rev. B, 32, 874 (1985). https://doi.org/10.1103/PhysRevB.32.874

P. Danesh, B. Pantchev, K. Antonova, E. Liarokapis, B. Schmidt, D. Grambole, and J. Baran, “Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane,” J. Phys. D, 37, 249 (2004). https://doi.org/10.1088/0022-3727/37/2/013

R. Tsu, J.G. Hernandez, and F.H. Pollak, “Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scattering,” J. NonCryst. Solids, 66, 109 (1984). https://doi.org/10.1016/0022-3093(84)90307-7

Z.Q. Cheng, H.Q. Shi, P. Yu, and Z.M. Liu, ‘Surface - enhanced Raman scattering effect of silver nanoparticles array,” Acta Phys. Sin. 67(19), 197302 (2018). https://doi.org/10.7498/aps.67.20180650

F. Huisken, H. Hofmeister, B. Kohn, M.A. Laguna, and V. Paillard, “Laser production and deposition of light-emitting silicon nanoparticles,” Appl. Surf. Sci. 154–155, 305 (2000). https://doi.org/10.1016/s0169-4332(99)00476-6

V. Vinciguerra, G. Franzo, F. Priolo, F. Iacona, and C. Spinella, “Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices,” J. Appl. Phys. 87, 8165 (2000). https://doi.org/10.1063/1.373513

Zh. Ma, X. Liao, J. He, W. Cheng, G. Yue, Y. Wang, and G. Kong, “Annealing behaviors of photoluminescence from SiOx:H,” J. Appl. Phys. 83, 7934 (1998). https://doi.org/10.1063/1.367973

S. Zhang, W. Zhang, and J. Yuan, “The preparation of photoluminescent Si nanocrystal–SiOx films by reactive evaporation,” Thin Solid Films, 326, 92 (1998). https://doi.org/10.1016/S0040-6090(98)00532-X

J. Zi, H. Buscher, C. Falter, W. Ludwig, K. Zhang, and X. Xie, “Raman shifts in Si nanocrystals,” Appl. Phys. Lett. 69, 200 (1996). https://doi.org/10.1063/1.117371

Kh.S. Daliev, Z.E. Bahronkulov, and J.J. Hamdamov, “Investigation of the Magnetic Properties of Silicon Doped with Rare-Earth Elements,” East Eur. J. Phys. (4), 167 (2023). https://doi.org/10.26565/2312-4334-2023-4-18

Kh.S. Daliev, Sh.B. Utamuradova, Z.E. Bahronkulov, A.Kh. Khaitbaev, and J.J. Hamdamov, “Structure Determination and Defect Analysis n-Si, p-Si Raman Spectrometer Methods,” East Eur. J. Phys. (4), 193 (2023). https://doi.org/10.26565/2312-4334-2023-4-23

K.J. Kingma, and R.J. Hemley, “Raman spectroscopic study of microcrystalline silica,” American Mineralogist, 79(3-4), 269 273 (1994). https://pubs.geoscienceworld.org/msa/ammin/article-pdf/79/3-4/269/4209223/am79_269.pdf

Sh.B. Utamuradova, H.J. Matchonov, Zh.J. Khamdamov, and H.Yu. Utemuratova, “X-ray diffraction study of the phase state of silicon single crystals doped with manganese,” New Materials, Connections Oath Applications, 7(2), 93-99 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v7n2/Utamuradova_et_al.pdf

Kh.S. Daliev, Sh.B. Utamuradova, J.J. Khamdamov, and M.B. Bekmuratov, “Structural Properties of Silicon Doped Rare Earth Elements Ytterbium,” East Eur. J. Phys. (1), 375-379 (2024). https://doi.org/10.26565/2312-4334-2024-1-37

Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Daliev, S. K., Khaitbaev, A., Khamdamov, J., Yuldoshev, U. M., & Paluanova, A. D. (2024). Influence of Gold on Structural Defects of Silicon. East European Journal of Physics, (2), 327-335. https://doi.org/10.26565/2312-4334-2024-2-38

Most read articles by the same author(s)

1 2 > >>