Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

  • Khodjakbar Daliev Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”,1 Yogdu st., Tashkent, Uzbekistan https://orcid.org/0000-0002-2164-6797
  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Shakhrukh Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • Jonibek Khamdamov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Uzbekistan https://orcid.org/0000-0003-2728-3832
  • Shahriyor B. Norkulov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-2171-4884
DOI: https://doi.org/10.26565/2312-4334-2025-3-33
Keywords: Dysprosium-doped silicon, Radiation defects, Gamma radiation, DLTS (Deep-Level Transient Spectroscopy), Neutron activation analysis, EDS (Energy Dispersive Spectroscopy), A-center, E-center, Crystal growth, Oxygen-vacancy complex, Radiation stability

Abstract

 

In this study, the formation and reduction mechanisms of radiation defects resulting from the incorporation of dysprosium (Dy) atoms during the growth process of silicon crystals (FZ) were investigated. Deep-level defects formed after doping n-type silicon with dysprosium and irradiating it with 60Co γ-rays were analyzed using Deep Level Transient Spectroscopy (DLTS). The research revealed that in the presence of dysprosium, the concentration of defects such as A-center (vacancy-oxygen complex) and E-center (vacancy-phosphorus complex) decreased significantly - by 2-4 times - compared to control samples. EDS spectral analysis was conducted to determine the concentration of surface element atoms in the sample, which demonstrated that the Dy element was uniformly distributed on the silicon surface and present in sufficient concentration. These results substantiate that Dy atoms in silicon play a passivating role, inhibiting the kinetics of radiation defect formation, consequently increasing the radiation resistance of silicon-based structures.

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References

Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint effect of Ni and Gf impurity atoms on the silicon solar cell photosensitivity,” Applied Solar Energy (English translation of Geliotekhnika), 41(1), 80–81 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity

K.S. Daliev, Sh.B. Utamuradova, A. Khaitbaev, J.J. Khamdamov, Sh.B. Norkulov, and M.B. Bekmuratov, “Defective Structure of Silicon Doped with Dysprosium,” East Eur. J. Phys. (2), 283 (2024). https://doi.org/10.26565/2312-4334-2024-2-30

X. Kong, Z. Xi, L. Wang, Y. Zhou, Y. Liu, et al., “Recent Progress in Silicon−Based Materials for Performance Enhanced Lithium Ion Batteries,” Molecules, 28(5), 2079 (2023). https://doi.org/10.3390/molecules28052079

V. Pelenitsyn, and P. Korotaev, “First-principles study of radiation defects in silicon,” Computational Materials Science, 207, 111273 (2022). https://doi.org/10.1016/j.commatsci.2022.111273

I. Pintilie, G. Lindstroem, A. Junkes, and E. Fretwurst, “Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors,” Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 611(1), 52-68 (2009). https://doi.org/10.1016/j.nima.2009.09.065

K.P. Abdurakhmanov, Kh.S. Daliev, Sh.B. Utamuradova, and N.Kh. Ochilova, “On defect formation in silicon with impurities of manganese and zinc,” Applied Solar Energy (English translation of Geliotekhnika), 34(2), 73–75 (1998). https://api.semanticscholar.org/CorpusID:99796881

S.B. Utamuradova, K.S. Daliev, A.I. Khaitbaev, J.J. Khamdamov, J.S. Zarifbayev, and B.S. Alikulov, “Defect Structure of Silicon Doped with Erbium,” East European Journal of Physics, (2), 288-292 (2024). https://doi.org/10.26565/2312-4334-2024-2-31

K.P. Abdurakhmanov, Sh.B. Utamuradova, Kh.S. Daliev, S.G. Tadjy-Aglaeva, and R.M. Érgashev, “Defect-formation processes in silicon doped with manganese and germanium,” Semiconductors, 32(6), 606–607 (1998). https://doi.org/10.1134/1.1187448

K.S. Daliev, Sh.B. Utamuradova, J.J. Khamdamov, Sh.B. Norkulov, and M.B. Bekmuratov, “Study of Defect Structure of Silicon Doped with Dysprosium Using X-Ray Phase Analysis and Raman Spectroscopy,” East Eur. J. Phys. (4), 311-321 (2024). https://doi.org/10.26565/2312-4334-2024-4-35

K.S. Daliev, Sh.B. Utamuradova, J.J. Khamdamov, M.B. Bekmuratov, O.N. Yusupov, Sh.B. Norkulov, and Kh.J. Matchonov, “Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium,” East Eur. J. Phys. (4), 301-304 (2024). https://doi.org/10.26565/2312-4334-2024-4-33

K.S. Daliev, Sh.B. Utamuradova, J.J. Khamdamov, M.B. Bekmuratov, Sh.B. Norkulov, and U.M. Yuldoshev, “Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis,” East Eur. J. Phys. (4), 240-249 (2024). https://doi.org/10.26565/2312-4334-2024-4-24

L.S. Berman, “Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide,” Semiconductors, 31, 67–68 (1997). https://doi.org/10.1134/1.1187040

G.L. Miller, D.V. Lang, and L.C. Kimerling, “Capacitance Transient Spectroscopy,” Annual review of materials research, 7, 377 448 (1977). https://doi.org/10.1146/annurev.ms.07.080177.002113

Sh.B. Utamuradova, Sh.Kh. Daliyev, J.J. Khamdamov, Kh.J. Matchonov, and Kh.Y. Utemuratova, East Eur. J. Phys. (2), 274 278 (2024). https://doi.org/10.26565/2312-4334-2024-2-28

S.A. Smagulova, I.V. Antonova, E.P. Neustroev, et al., “Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions,” Semiconductors, 37, 546–550 (2003). https://doi.org/10.1134/1.1575358

J. Stahl, E. Fretwurst, G. Lindström, and I. Pintilie, “Deep defect levels in standard and oxygen enriched silicon detectors before and after 60Co-γ-irradiation,” Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 512(1-2), 111–116 (2003). https://doi.org/10.1016/S0168-9002(03)01884-9

K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and Z.E. Bahronkulov, “Morphology of the Surface of Silicon Doped with Lutetium,” East European Journal of Physics, (2), 304-308 (2024). https://doi.org/10.26565/2312-4334-2024-2-34

A.I. Prostomolotov, Yu.B. Vasiliev, and A.N. Petlitsky, “Mechanics of defect formation during growth and heat treatment of single-crystal silicon,” (4), 1716–1718 (2011). http://www.unn.ru/pages/e-library/vestnik/19931778_2011_-_4-4_unicode/147.pdf

J.R. Srour, and J.W. Palko, “Displacement Damage Effects in Irradiated Semiconductor Devices,” IEEE Transactions on Nuclear Science, 60(3), 1740–1766, (2013). https://doi.org/10.1109/tns.2013.2261316

M.S. Kukurudziak, V.M. Lipka, and V.V. Ryukhtin, “Silicon p-i-n Mesa-Photodiode Technology,” East Eur. J. Phys. (3), 385 389 (2024). https://doi.org/10.26565/2312-4334-2024-3-47

D.V. Lang, “Deep-Level Transient Spectroscopy: A New Method to Characterize Traps in Semiconductors,” Journal of Applied Physics, 45(7), 3023–3032 (1974). https://doi.org/10.1063/1.1663716

J. Goldstein, et al., Scanning Electron Microscopy and X-ray Microanalysis, (Springer, 2017). https://doi.org/10.1007/978-1-4615-0215-9

V.A. Kozlov, and V.V. Kozlovski, “Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles,” Semiconductors, 35, 735–761 (2001). https://doi.org/10.1134/1.1385708

A.S. Zakirov, Sh.U. Yuldashev, H.J. Wang, H.D. Cho,T.W. Kang, J.J. Khamdamov, and A.T. Mamadalimov, Photoluminescence study of the surface modified and MEH-PPV coated cotton fibers, Journal of Luminescence, 131(2), 2, 301-305 (2011). https://doi.org/10.1016/j.jlumin.2010.10.019

A.S. Zakirov, S.U. Yuldashev, H.D. Cho, et al., “Functional hybrid materials derived from natural cellulose,” Journal of the Korean Physical Society, 60, 1526–1530 (2012). https://doi.org/10.3938/jkps.60.1526

Published
2025-09-08
Cited
How to Cite
Daliev, K., Utamuradova, S. B., Daliev, S., Khamdamov, J., & Norkulov, S. B. (2025). Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals. East European Journal of Physics, (3), 343-347. https://doi.org/10.26565/2312-4334-2025-3-33
Issue
No. 3 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Khodjakbar S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov, Shahriyor B. Norkulov

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