Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Dilmurod A. Rakhmanov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0003-1275-5999
  • Afsun S. Abiyev Innovation and Digital Development Agency, Baku, Azerbaijan; Khazar University, Baku, Azerbaijan; Western Caspian University, Baku, Azerbaijan https://orcid.org/0009-0009-9377-7567
Keywords: Monocrystal, Silicon, Irradiation, Alpha particles, Proton, Gamma quantum, X-ray diffraction

Abstract

In this work, the influence of alpha particles, protons and gamma rays on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. N-type silicon (KEF-40) was used for the study. The samples were irradiated with protons with a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 µA, irradiated with alpha particles with a dose of 6×1014 cm-2 with an energy of 800 keV and a current of 0.5÷1 µA and γ− 60Co quanta with a flux intensity of ~ 3.2×1012 quantum/cm2·s. Based on the results of X-ray diffraction analysis, it was established that distortions, vacancies and amorphization of lattice parameters that arose after irradiation lead to an increase in lattice parameters.

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References

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Published
2024-06-01
Cited
How to Cite
Utamuradova, S. B., Rakhmanov, D. A., & Abiyev, A. S. (2024). Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si. East European Journal of Physics, (2), 380-383. https://doi.org/10.26565/2312-4334-2024-2-47

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