Influence of Different Types of Radiation on the Crystal Structure of Silicon Monocrystals n-Si
Abstract
In this work, the influence of alpha particles, protons and gamma rays on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. N-type silicon (KEF-40) was used for the study. The samples were irradiated with protons with a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 µA, irradiated with alpha particles with a dose of 6×1014 cm-2 with an energy of 800 keV and a current of 0.5÷1 µA and γ− 60Co quanta with a flux intensity of ~ 3.2×1012 quantum/cm2·s. Based on the results of X-ray diffraction analysis, it was established that distortions, vacancies and amorphization of lattice parameters that arose after irradiation lead to an increase in lattice parameters.
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