Planar hybrid heterostructures on the monolayer – GaN system
Abstract
Background. Graphene-like two-dimensional (2D) materials as promising for creating the future element base of electronics are considered. Interactions between layers of two-dimensional materials are not limited by chemical bonding and matching of the interfacial lattice. It is permitted to form heterojunctions both from different 2D materials and hybrid 2D/3D heterojunctions, having many unique characteristics and opportunities for application. One of the actual tasks is to study 2D/3D heterojunctions, and possibility of their usage as elements of electronic devices to improve or change their properties.
The aim of the work. The aim of study is to determine characteristics of planar diodes based on bulk materials (GaN), in which monolayers act as structural elements forming a 2D/3D heterojunction with a diode channel.
Techniques and Methodology. Mathematical simulation of charge transfer processes is carried out applying a two-dimensional model of a planar diode by using Ensemble Monte Carlo technique. Since the main mechanism of charge carrier redistribution between regions of different sizes was considered to be transitions involving phonons, a channel based on molybdenum dichalcogenide (MoS2), which forms a heterojunction with GaN - diode channel, was analyzed. The peculiarities of the space charge regions formation near 2D/3D - heteroboundaries are analyzed. Static characteristics of diodes were determined.
Results Charge carriers distributions in the diode channel according to the ratio of the impurity concentration in the monolayer and the channel were obtained in the course of the research. Influence of the monolayer on average concentration of electrons in the channel was studied. Dependences of current on applied voltage in a diode with a monolayer is obtained. A significant effect on charge transfer processes in the diode channel was established which can be achieved when the doping level of the GaN-based channel does not exceed 4·1022 m-3.
Conclusions: The main factors affecting on the total current of a planar diode with a 3D/2D heterojunction are the parameters of the bulk part of the diode, the channel width and the doping level leading to the appearance of depleted GaN layer bordering the monolayer.
Downloads
References
Botsula OV, Pryhodko KH, Zozulia VO. Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border. 2018 9-th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS). 2018 Sep 4. https://doi.org/10.1109/UWBUSIS.2018.8520067
Botsula OV, Zozulia VO. Generation of THz Oscillations by Diodes with Resonant Tunneling Boundaries, Journal of Nano- and Electronic Physics. 2020 Dec; 12(6): 06037-1– 4. https://doi.org/10.21272/jnep.12(6).06037
Xu KY, Wang G, Song AM. Gunn oscillations in a self-switching nanodiode, Applied Physics Letters. 2008 Dec; 93(23): 233506-1 – 3. https://doi.org/10.1063/1.3042268
Wang J, Li Z, Chen H, Deng G, Niu X. Recent Advances in 2D Lateral Heterostructures, Nano-Micro Letters. 2019 Jun; 11(1): 48-1 – 31. https://doi.org/10.1007/s40820-019-0276-y
Gupta P, Rahman AA, Subramanian S, et al. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth, Scientific Reports. 2016 Mar: 6; 23708-1 –8. https://doi.org/10.1038/srep23708
Zhang Z, Qian Q, Li B, Chen KJ. Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment, ACS Applied Materials & Interfaces. 2018 May: 10(20): 1 – 21. https://doi.org/10.1021/acsami.8b01286
Ruzmetov D, Zhang K, Stan G, Kalanyan B, Bhimanapati GP. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride, ACS Nano. 2016 Mar: 10(3); 3580 – 88. https://doi.org/10.1021/acsnano.5b08008
Jeong H, Bang S, Oh H, et al. Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, H-BN, and GaN Heterostructure, ACS Nano. 2015 Oct: 9(10); 10032 – 38. https://doi.org/10.1021/acsnano.5b04233
Tangi M, Mishra P, et al. Determination of Band Offsets at GaN/single-Layer MoS2 Heterojunction, Applied Physics Letters. 2016 Aug: 109; 032104-1 – 5. https://doi.org/10.1063/1.4959254
Tangi M, Mishra P, Tseng CC, et al. Band Alignment at GaN/Single-Layer WSe 2 Interface, ACS Applied Materials & Interfaces. 2017 Feb: 9(10); 1 – 30. https://doi.org/10.1021/acsami.6b15370
Lee EW, Lee CH, Paul PK, et al. Layer-Transferred MoS2/GaN PN Diodes, Applied Physics Letters. 2015 May:107(10); 103505-1 – 4. https://doi.org/10.1063/1.4930234
Henck H, et al. Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001), Physical Review B. 2017 Sep: 96; 115312-1 – 7. https://doi.org/10.1103/PhysRevB.96.115312
Wang J, Shu H, Liang P, Wang N, Cao D, Chen X. Thickness-Dependent Phase Stability and Electronic Properties of GaN Nanosheets and MoS2/GaN van der Waals Heterostructures, Journal of Physical Chemistry C. 2019 Jan: 123; 3861−3867. https://doi.org/10.1021/acs.jpcc.8b10915
Poudel Y, Sławińska J, Gopal P, et.al. Absorption and emission modulation in a MoS2–GaN (0001) heterostructure by interface phonon–exciton coupling, Photonics Research. 2019 Dec: 7(12); 1511 – 20. https://doi.org/10.48550/arXiv.1906.03899
Botsula O, Prykhodko K, Zozulia V. Modeling of Planar 2D/3D Semiconductor Heterostructures Based on MoS2/GaN Junction. 2022 IEEE Ukrainian Microwave Week (UkrMW), 2022 Nov 14. https://doi.org/10.1109/UkrMW58013.2022.10037030
Fischetti MV, O’Regan TP, Narayanan S, Sachs C. Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length, IEEE Transactions On Electron Devices. 2007 Oct: 54(9); 2116 – 2136. https://doi.org/10.1109/TED.2007.902722
Dawes JM, Sceats MG. Electron trapping in quantum-well structures, Physical Review B. 1987 Dec: 36(18); 9604 – 11. https://doi.org/10.1103/PhysRevB.36.9604
Kannan ES, Kim1 GH, Farrer I, Ritchie DA. Charge trapping in a double quantum well system, Journal Of Physics: Condensed Matter. 2008 Oct: 20; 455206-1 – 4. https://doi.org/10.1088/0953-8984/20/45/455206
Su WB, Lu SM, Jeng HT, et al. Observing quantum trapping on MoS2 through the lifetimes of resonant electrons: revealing the Pauli exclusion principle, Nanoscale Advances. 2020 Nov: 2; 5848 – 56. https://doi.org/10.1039/D0NA00682C
Laux SE. On particle-mesh coupling on Monte Carlo device simulation, IEEE Transactions on computer-aided design of integrated circuits and systems. 1996 Dec: 15(10); 1266 – 77. https://doi.org/10.1109/43.541446
Joppich W, Mijalkovic S. Multigrid Methods for Process simulation. Springer; 1993.
Peng B, Wei Z, Jiantao Q, Zhang ZW. Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors, Materials. 2018 Mar: 11(3); 430-1 – 430-9. https://doi.org/10.3390/ma11030430
This work is licensed under a Creative Commons Attribution 4.0 International License.
