Characteristics of noise diodes with a graded-gap cathode accounting for self-heating effects
Abstract
Background. There are a number of limitations to obtaining the generation of electromagnetic oscillations at high frequencies and for functional application of solid-state electronic devices. Physical limitations, and the inertia of key processes to be determinate its operation, are often an obstacle to achieving the appropriate operating frequency or the desired functionality. The use of graded materials and their successful integration into in a device structure, such as bipolar heterotransistors or intervalley electron transfer diodes, can often ensure the obtaining of appropriate characteristics. The application of graded materials allows us to improve the frequency characteristics of devices. It is relevant for the creation of active elements intended for the generation of complex noise signals.
Purpose of Work. The aim of the work is the development of a GaN-based active element with an InGaN-based graded gap mesa structure, and evaluation of their characterization.
Techniques and Methodology. To simulate the operation of the diode and obtain its characteristics, the Ensemble Monte Carlo method was applied. It involved into a procedure for determining of temperature distribution and took into account the thermal properties of the contact regions (cathode, anode and substrate).
Results. A GaN-based active element for a wide frequency range is proposed. The diode structure consists of a conductive channel with a cathode mesa structure based on a graded-gap InGaN layer and two ohmic contacts to the cathode and anode. The direct current diode characteristics are obtained. The conditions to obtaining of the required electric field distribution in the diode cathode are examined
Conclusions: The characteristics of a GaN-based active element with graded InGaN mesa structures at the cathode were obtained by using Monte Carlo simulation. Electric field stabilization and impact ionization can be obtained in the structure was shown. The structure may be used for wide frequency noise generation.
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References
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