Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Shakhrukh Kh. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • Sultanpasha A. Muzafarova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-5491-7699
  • Kakhramon M. Fayzullaev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7362-1439
DOI: https://doi.org/10.26565/2312-4334-2023-3-41
Keywords: Diffusion, Associate, Lifetime, Film, Acceptor center, Radioactive isotope, Distribution, Mobility, Resistivity, Diffusion coefficient, Enthalpy

Abstract

The process of diffusion of labeled copper  atoms in p-CdTe<Pb> coarse-block films with a columnar grain structure has been studied. The CdTe<Pb> film is a p-type semiconductor, where an increase in the Pb concentration in the composition of the CdTe films increases the resistivity ρ of the structure. When the Pb concentration in CdTe changes from 1018 to 5·1019 cm-3, the hole concentration decreases by more than 3 orders of magnitude at a constant operating level depth of EV + (0.4 ± 0.02) eV. This may indicate that the concentration of acceptor defects, which are formed in the films due to self-compensation upon doping with a PbCd donor, exceeds the number of the latter. Electrical measurements by the Hall method were carried out at a direct current and a temperature of 300 K. As a result, an increase in the temperature of films on a Mo-p-CdTe<Pb> substrate during annealing affects the electrical parameter of charge carrier mobility µ, it decreases significantly. X-ray diffraction analysis showed that on the diffraction patterns of samples of p-CdTe<Pb> films, all available reflections correspond to the CdTe phase and up to х = 0.08 do not contain reflections of impurity phases and have a cubic modification. Based on the results of the calculation, it was established that the low values of the diffusion coefficient of Cu atoms are due to the formation of associates of the A type , which are directly dependent on the concentration of  atoms. Diffusion length Ln and lifetime τn of minority current carriers in large-block p-type cadmium telluride films, which can also be controlled by introducing lead atoms into cadmium telluride.

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References

S.A. Muzafarova, Sh.B. Utamuradova, A.М. Abdugafurov, K.M. Fayzullaev, E.M. Naurzalieva, and D.A. Rakhmanov, Applied Physics, 4, 81 (2021). https://applphys.orion-ir.ru/appl-21/21-4/PF-21-4-81.pdf

Sh.A. Mirsagatov, P.I. Knigin, M.A. Makhmudov, and S.A. Muzafarova. Applied Solar Energy (English translation of Geliotekhnika), 1, 45 (1991). https://www.scopus.com/record/display.uri?eid=2-s2.0-0025927279&origin=resultslist&sort = plf-f

D. Nematov, Kh. Kholmurodov, A. Stanchik, K. Fayzullaev, V. Gnatovskaya, and T. Kudzoev, Trends in Sciences, 20(2), 4058 (2023). https://doi.org/10.33263/LIANBS123.067

D. Nematov, Kh. Kholmurodov, A. Stanchik, K. Fayzullaev, V. Gnatovskaya, and T. Kudzoev. Letters in Applied NanoBioScience, 12(3), 67 (2023). https://doi.org/10.48048/tis.2023.4058

E.S. Nikonyuk, Z.I. Zakharuk, and M.I. Kuchma, Semiconductors, 42, 1012(2008). https://doi.org/10.1134/S1063782608090029

K. Biswas, and M.H. Du. New J. Phys. 14, 063020 (2012). https://doi.org/10.1088/1367-2630/14/6/063020

S.A. Muzafarova, Sh.A. Mirsagatov, and J. Janabergenov, Physics of the Solid State, 49(6), 1168 (2007). https://doi.org/10.1134/S1063783407060248

Sh.B. Utamuradova, S.A. Muzafarova, and A.A. Abdugafurov, in: IX International Conference Photonics and Information Optics (Moscow, 2022), p.217. [in Russian]

A.A. Alieva, Sh.A. Mirsagatov, S.A. Muzafarova, and A.A. Abduvaitov, in: II International Conference Fundamental and Applied Questions of Physics (Tashkent, 2004), p.211.[in Russian]

G.А. Korablev. Eur. Chem. Bull. 7(1), 23 (2018). https://doi.org/10.17628/ecb.2018.7.23-29

T.D. Dzhafarov, S.S. Yesilkaya, N.Y. Canli, and M. Çalişkan, Solar Energy Materials and Solar Cells, 85(3), 371 (2005). https://doi.org/10.1016/j.solmat.2004.05.007

T. Walker, M.E. Stuckelberger, T. Nietzold, and N. Mohan-Kumar, Nano Energy, 91, 106595 (2022). https://doi.org/10.1016/j.nanoen.2021.106595

B.G. Jang, M. Kim, S.H. Lee, W.Yang, S.H. Jhi, and Y.W. Son. Phys. Rev. Lett. 130, 136401 (2023). https://doi.org/10.1103/PhysRevLett.130.136401

S.A. Muzafarova, Sh.A. Mirsagatova, and J. Janabergenov, Physics of the Solid State, 49(6), 1168 (2007). https://doi.org/10.1134/S1063783407060248

S.A. Muzafarova, S.A. Mirsagatov, and F.N. Dzhamalov, Semiconductors, 43(2), 175(2009). https://doi.org/10.1134/S1063782609020109

A. Bosio, R. Ciprian, A. Lamperti, I. Rago, B. Ressel, G. Rosa, M. Stupar, and E. Weschke, Solar Energy, 176, 186 (2018). https://doi.org/10.1016/j.solener.2018.10.035

A. Chandran, A. Erez, S.S. Gubser, and S.L. Sondhi, Phys. Rev. B, 86, 064304 (2012). https://doi.org/10.1103/PhysRevB.86.064304

S.A. Muzafarova, Physical processes in thin-film solar cells nCdS/pCdTe, (LAP LAMBERT Academic Publishing RULAP LAMBERT, 2020), p.63.

S. Lou, H. Zhu, S. Hu, C. Zhao, and P. Han. Scientific Reports, 5, 14084 (2015). https://doi.org/10.1038/srep14084

P. Wurfel, T. Trupke, and T. Puzzer. J. Appl. Phys. 101, 123110 (2007). http://dx.doi.org/10.1063/1.2749201

M. Bukała, P. Sankowski, R. Buczko, and P. Kacman, Nanoscale Research Letters, 6, 126 (2011). http://www.nanoscalereslett.com/content/6/1/126

Published
2023-09-04
Cited
How to Cite
Utamuradova, S. B., Daliev, S. K., Muzafarova, S. A., & Fayzullaev, K. M. (2023). Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms. East European Journal of Physics, (3), 385-390. https://doi.org/10.26565/2312-4334-2023-3-41
Issue
No. 3 (2023): East European Journal of Physics
Section
Original Papers

Copyright (c) 2023 Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Sultanpasha A. Muzafarova, Kakhramon M. Fayzullaev

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