The impact of temperature on heterocathode noise diodes characteristics
Abstract
Background. The creation of compact noise sources in a wide frequency range, capable of invariance and reproducibility characteristics over time and external conditions, is an urgent task in the telecommunications and security field, in particular, as reference signal sources for measuring the noise characteristics of amplifiers and receivers. One of the devices that can satisfy the requirements for noise sources are diodes with a cathode static domain (DCSD). An important factor that affects the characteristics of semiconductor devices is temperature and self-heating.
Purpose of Work. The aim of the work is to study the effect of temperature and self-heating on the characteristics of DCSDs containing a graded-band layer based on nitride compounds.
Techniques and Methodology. Diode characteristics are obtained by numerical modeling of carrier transfer processes in two-dimensional semiconductor structures using the ensemble Monte Carlo method. Substantial mechanisms of scattering of charge carriers are taken into account. The work calculates the dependences of the current density on different values of the constant bias voltage on the diode and on different temperatures with and without taking into account heating. The phonon model was used to describe the heating processes in the selected diodes.
Results. The dependences of the current density on the applied supply voltage were obtained for various DCSD doioded with a graded band AlGaN cathode under the conditions of a different constant temperature and taking into account the of self-heating effects. It is shown that an increase in temperature leads to a decrease in the diode current density. The self-heating effect is shown can significantly limite the operating voltage range of the diode.
Conclusions: The effect of temperature on the operation of diodes based on AlGaN with a graded gap heterocathode is demonstrated. An increase in temperature leads to a limitation of the working voltages of the diode and, under the conditions of impact ionization, can lead to the destruction of the diode.
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References
Crandall JP, O JH, Gajwani P, et al. Measurement of Brown Adipose Tissue Activity Using Microwave Radiometry and F-FDG PET/CT. Journal of Nuclear Medicine. 2018 Aug; 59(8): 1243–1248.
Song HJ, Tadao Nagatsuma. Handbook of Terahertz Technologies. CRC Press; 2015.
Isogawa T, Kumashiro T, Song HJ, Ajito K, Kukutsu N, Iwatsuki K, et al. Tomographic Imaging Using Photonically Generated Low-Coherence Terahertz Noise Sources. IEEE Transactions on Terahertz Science and Technology. 2012 Sep;2(5):485–92.
Chan WL, Deibel J, Mittleman DM. Imaging with terahertz radiation. Reports on Progress in Physics. 2007 Jul 12;70(8):1325–79.
Price DC, Greenhill LJ, Fialkov A, et al. Design and characterization of the Large-aperture Experiment to Detect the Dark Age (LEDA) radiometer systems. Monthly Notices of the Royal Astronomical Society. 2018 May; 478(3): 4193–4213.
Kramer HJ. Observation of the Earth and Its Environment: Survey of Missions and Sensors. Springer-Verlag; 2002.
Parashare CR, Kangaslahti PP, Brown ST, et al. Noise sources for internal calibration of millimeter-wave radiometers. 13th Specialist Meeting On Microwave Radiometry and Remote Sensing of the Environment (Microrad). 2014 Mar.
Ehsan N, Piepmeier J, Solly M, Macmurphy S, Lucey J, Wollack E. A robust waveguide millimeter-wave noise source. 2015 European Microwave Conference (EuMC). 2015 Sep 7.
Dunleavy L, Smith M, Lardizabal S, Fejzuli A, Roeder R. Design and characterization of fet based cold/hot noise sources. IEEE MTT-S International Microwave Symposium Digest. 1997 Jun 8.
Kantanen M, Weissbrodt E, Varis J, et al. Active cold load MMICs for Ka-, V-, and W-bands. IET Microwaves, Antennas & Propagation. 2015 Jun, 9(8): 742–47.
Prokhorov ED, Botsula OV, Dyadchenko AV, Gorbunov IA. Monte Carlo sіmulation of diode with cathode static domain. 2013 23rd Int. Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo). 2013 Sep 8.
Storozhenko IP. Static domain in a transferred-electron device based on graded-gap AlGaAs. Telecommunications and Radio Engineering. 2016; 75(12): 1101–11.
Botsula O, Prykhodko K, Zozulia V. Modeling of Planar 2D/3D Semiconductor Heterostructures Based on MoS2/GaN Junction. 2022 IEEE Ukrainian Microwave Week (UkrMW). 2022 Nov 14.
Fan A, Tarau C, Bonner R, Palacios T, Kaviany M. 2-D simulation of hot electron-phonon interactions in a submicron gallium nitride device using hydrodynamic transport approach. ASME 2012 Summer Heat Transfer Conference (HT2012). 2012 Jul 8.
Wang HY, Xu H, Huang TT, Deng CS. Thermodynamics of wurtzite GaN from first-principle calculation. The European Physical Journal B. 2008 Mar, 62: 39–43.
Venkatachalam A, James W, Graham S. Electro-Thermal- Mechanical Modeling of GaN-based HFETs and MOSHFETs. Semiconductor Science and Technology. 2011 Jun, 26(8): 085027-2.
Vitanov S, Palankovski V, Maroldt SR. Quay High-temperature modeling of AlGaN/GaN HEMTs. Solid-State Electronics. 2010 Oct, 54(10): 1105–12.
Adachi S. Properties of semiconductor alloys: Group-IV, III-V and II-VI Semiconductors. John Wiley & Sons; 2009.
Quay R. Gallium Nitride Electronics. Springer; 2008.
