Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

  • Sharifa B. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-1718-1122
  • Khojakbar S. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • Shakhrukh Kh. Daliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0001-7853-2777
  • Uktam K. Erugliev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
Keywords: Capacitive spectroscopy, DLTS, Silicon, Doping, Samarium, Heat Treatment, Energy Spectrum, Deep Level, Formation Efficiency

Abstract

The effect of thermal treatment on the behavior of samarium atoms introduced into silicon during the growth process was studied using the method of transient capacitive deep-level spectroscopy (DLTS). It has been shown that various high-temperature treatments lead to the activation of samarium atoms in the bulk of n-Si and the formation of deep levels. The energy spectrum of deep levels arising during heat treatments has been determined. The dependence of the efficiency of formation of these levels in n‑Si<Sm> on the processing temperature has been studied. It was found that the higher the content of samarium atoms in the bulk of silicon at the same high-temperature treatment temperature, the higher the concentration of the deep level EC–0.39 eV. From this, we can conclude that the EC–0.39 eV level is associated with the activation of samarium atoms in the n-Si<Sm> volume.

Downloads

Download data is not yet available.

References

O.V. Alexandrov, A.O. Zakhar’in, N.A. Sobolev, and Y.A. Nikolaev, Semiconductors, 36(3), 379 (2002). https://doi.org/10.1134/1.1461417

Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, Applied Solar Energy, (41(1), 80 (2005). https://www.scopus.com/record/display.uri?eid=2-s2.0-33344466989&origin=resultslist&sort=plf-f

X. Chuanyun, J. Blundell, F. Hagelberg, and A. William, International Journal of Quantum Chemistry, 96(4), 416 (2004). https://doi.org/10.1002/qua.10735

Kh.S. Daliev, Sh.B. Utamuradova, I.K. Khamidzhonov, A.Z. Akbarov, I.K. Mirzairova, and Z. Akimova, Inorganic Materials, 37(5), 436 (2001). https://doi.org/10.1023/A:1017556212569

Sh.B. Utamuradova, Kh.S. Daliev, E.K. Kalandarov, and Sh.Kh. Daliev, Technical Physics Letters, 32(6), 469 (2006). https://doi.org/10.1134/S1063785006060034

S.B. Utamuradova, and D.A. Rakhmanov, Annals of the University of Craiova, Physics, 32, 132 (2022). https://cis01.central.ucv.ro/pauc/vol/2022_32/15_PAUC_2022_132_136.pdf

S.Z. Zainabidinov, Kh.S. Daliev, K.P. Abdurakhmanov, Sh.B. Utamuradova, I.Kh. Khomidjonov, and I.A. Mirzamurodov, Modern Physics Letters B, 11(20), 909 (1997). https://doi.org/10.1142/S0217984997001110

R.L. Satet, M.J. Hoffmann, and R.M. Cannon, Materials Science and Engineering: A, 422(1-2), 66 (2006). http://dx.doi.org/10.1016%2Fj.msea.2006.01.015

C. Gross, G. Gaetano, T.N. Tucker, and J.A. Baker, Journal of the Electrochemical Society, 119(7), 926 (1972). https://doi.org/10.1149/1.2404370

S.I. Vlasov, D.E. Nazyrov, A.A. Iminov, and S.S. Khudaiberdiev, Technical Physics Letters, 26(4), 328 (2000). https://doi.org/10.1134/1.1262833

Sh.B. Utamuradova, Sh.Kh. Daliev, S.A. Muzafarova, and K.M. Fayzullaev. East European Journal of Physics, 3, 385 (2023). https://doi.org/10.26565/2312-4334-2023-3-41

Sh.B. Utamuradova, Sh.Kh. Daliev, E.M. Naurzalieva, and X.Yu. Utemuratova, East European Journal of Physics, 3, 430 (2023). https://doi.org/10.26565/2312-4334-2023-3-47

N.A. Turgunov, E.Kh. Berkinov, and R.M. Turmanova, East European Journal of Physics, 3, 287 (2023). https://doi.org/10.26565/2312-4334-2023-3-26

G. Gulyamov, S.B. Utamuradova, M.G. Dadamirzaev, N.A. Turgunov, M.K. Uktamova, K.M. Fayzullaev, A.I. Khudayberdiyeva, and A.I. Tursunov, East European Journal of Physics, 2, 221 (2023). https://doi.org/10.26565/2312-4334-2023-2-24

Sh.B. Utamuradova, S.A. Muzafarova, A.М. Abdugafurov, K.M. Fayzullaev, E.M. Naurzalieva, and D.A. Rakhmanov, Applied Physics, 4, 81(2021). https://doi.org/10.51368/1996-0948-2021-4-81-86

X. Lan, J. Gao, K. Xue, H. Xu, and Z. Guo, Separation and Purification Technology, 293, 121121 (2022). https://doi.org/10.1016/j.seppur.2022.121121

K.P. Abdurakhmanov, Sh.B. Utamuradova, Kh.S. Daliev, S.G. Tadjy-Aglaeva, and R.M. Ergashev, Semiconductors, 32(6), 606 (1998). https://doi.org/10.1134/1.1187448

Sh.B. Utamuradova, Kh.I. Kalandarov, and J.J. Khamdamov, Semiconductor Physics and Microelectronics, 2(2), 9 (2020). https://www.dropbox.com/s/7ykbddvwwiq3q8v/ON%20INTERACTION%20OF%20MANGANESE%20AND%20ZINC%20IMPURITIES%20IN%20SILICON.pdf?dl=0 (in Russian)

Kh.S. Daliev, Natural and technical sciences, RAS, 2(40), 22 (2009). https://naukarus.com/vliyanie-primesi-gadoliniya-na-harakteristiki-kremnievyh-mdp-struktur (in Russian)

L.S. Berman, and A.A. Lebedev, Capacitance spectroscopy of deep centers in semiconductors, Science, (Nauka, Leningrad, 1981). (in Russian)

Kh.T. Igamberdyev, A.T. Mamadalimov, and P.K. Khabibullaev, Journal of Engineering Physics, 57(4), 1220 (1989). https://doi.org/10.1007/BF00871143

S. Zainabidinov, D.E. Nazyrov, and M.I. Bazarbaev, Electronic Materials Processing, 4, 90 (2006). https://cyberleninka.ru/article/n/diffuziya-rastvorimost-i-elektricheskie-svoystva-samariya-i-itterbiya-v-kremnii/pdf (in Russain)

K.H. Goh, A.S. Haseeb, and Y.H. Wong, Journal of Alloys and Compounds, 722, 729 (2017). https://doi.org/10.1016/j.jallcom.2017.06.179

D.V. Lang, Journal of Applied Physics, 45, 3023 (1974). http://dx.doi.org/10.1063/1.1663719

Published
2023-12-02
Cited
How to Cite
Utamuradova, S. B., Daliev, K. S., Daliev, S. K., & Erugliev, U. K. (2023). Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity. East European Journal of Physics, (4), 303-306. https://doi.org/10.26565/2312-4334-2023-4-39

Most read articles by the same author(s)

<< < 1 2