Daliev, Shakhrukh Kh., Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan, Uzbekistan
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East European Journal of Physics No. 4 (2023): East European Journal of Physics - Original Papers
On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
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East European Journal of Physics No. 3 (2023): East European Journal of Physics - Original Papers
Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms
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East European Journal of Physics No. 4 (2023): East European Journal of Physics - Original Papers
Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity
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East European Journal of Physics No. 2 (2024): East European Journal of Physics - Original Papers
Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods
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East European Journal of Physics No. 2 (2024): East European Journal of Physics - Original Papers
Influence of Gold on Structural Defects of Silicon
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