TCAD-Based Capacitance Analysis for Identifying Longitudinally Localized Oxide-Trapped Charge in SOI FinFETS
Abstract
This study examines the effect of the spatial position of locally trapped oxide charge on the gate-to-source and gate-to-drain capacitances of an SOI FinFET using three-dimensional TCAD Sentaurus simulations. The results reveal that the location of the trapped charge strongly influences the gate-to-source capacitance via charge-carrier redistribution near the channel surface, whereas a distinct response is observed when the trapped charge is near the oxide edge. Moreover, the gate-drain-to-gate-source capacitance ratio varies systematically with the trapped-charge position along the channel, suggesting that this parameter can serve as a reliable electrical indicator for detecting oxide-trapped charge and estimating its spatial distribution in FinFET devices.
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References
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Copyright (c) 2026 Mirzabaxhrom Foziljonov, Biloliddin M. Ergashev, Nuritdin Y. Yunusaliyev, Masudjon Norbutayev, Kumush Orinboyeva
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