Electrophysical Nature of Defects in Silicon Caused by Implanted Platinum Atoms
Abstract
The article of this study focuses on the defects caused by the platinum (Pt) atoms implanted in the silicon (Si) with the changes of their electrophysical properties after the high temperature thermal treatments. The introduction of the platinum atom into the silicon crystal lattice creates deep-level defect centers where the sensitive electrical properties and phenomena caused by temperature changes can be observed more clearly than in intrinsic defects. Of particular focus on platinum atoms incorporation, extensive studies have demonstrated significant changes of the defect structure in silicon and substantial transformation of its electrophysical properties related to the electrical conduction mechanisms and carrier scattering phenomena. Exclusive electrophysical effects were observed for platinum-doped silicon samples, which underwent high-temperature thermal annealing at 1050 °C and 1150 °C, primarily associated with the clustering of boron and platinum atoms, and the formation of complex defect aggregates. These thermal treatments enhance the interaction of isolated defects leading to the formation of clusters and complex defect entities, which greatly enhances the scattering mechanisms. These interactive effects of defects were found to be dominant in changing charge carrier transport and recombination processes in silicon crystals. Furthermore, experimental results showed a combination of scattering mechanisms that includes neutral defects, deep energy levels induced by platinum impurities, and their respective charged states. Platinum-induced defects thus enable multiple scattering mechanisms, and such hybrid mechanisms play a critical role in a silicon electrical and electronic behaviors, which influence the semiconductor applicability of the materials in high-temperature or high-performance, etc.
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References
B. Pramanik, A. Al Rakib, A. Siddik, and Sh. Bhuiyan, “Doping Effects and Relationship between EnergyBand Gaps, Impact of Ionization Coefficient and Light Absorption Coefficient in Semiconductors,” European Journal of Engineering and Technology Research, 9(1), 10-15 (2024). https://doi.org/10.24018%2Fejeng.2024.9.1.3118
S. Ibrahim, “Effect of temperature on silicon carriers mobilitiesusing.Res Article,” Al-Mustansiriyah J. Sci. 28(3), 214–21 (2018). http://dx.doi.org/10.23851/mjs.v28i3.185
S. Reggiani, A. Valdinoci, L. Colalongo, and et al., “Surface mobility in silicon at large operating temperature,” in: International Conference on Simulation of Semiconductor Processes and Devices, (Kobe, Japan, 2002), pp. 15-20. https://doi.org/10.1109/SISPAD.2002.1034506
G. Ghibaudo, and Q. Rafhay, “Electron and Hole Mobility in Semiconductor Devices,” in: Wiley Encyclopedia of Electrical and Electronics Engineering, (France, 2014), pp 1-13. https://doi.org/10.1002/047134608X.W3148.pub2
J.A. Solovjov, and V.A. Pilipenko, “Effect of rapid thermal treatment теmperature on electrophysical properties of nickel films on silicon,” Doklady Bguir. 18(1), 81-88 (2020). http://dx.doi.org/10.35596/1729-7648-2020-18-1-81-88
A.I. Prostomolotov, Yu.B. Vasiliev, and A.N. Petlitsky, “Mechanics of defect formation during growth and heat treatment of singlecrystal silicon,” 4, 1716–1718 (2011). http://www.unn.ru/pages/e-library/vestnik/19931778_2011_-_4-4_unicode/147.pdf (in Russian)
S.Z. Zainabidinov, Sh.Kh. Yulchiev, A.Y. Boboev, B.D. Gulomov, N.Y. Yunusaliyev, and “Structural properties of Al-doped ZnO films,” Eur. J. Phys. (3), 282 (2024). https://doi.org/10.26565/2312-4334-2024-3-28
K. Ali, S. Khan, M. Zubir, and M.Z.M. Jafri, “Spin-on doping (SOD) and diffusion temperature effect on re-combinations/ideality factor for solar cell applications,” Chalcogenide Letters, 9, 457–463 (2012). https://www.chalcogen.ro/457_KhuramAli.pdf
Sh.B. Utamuradova, Kh.J. Matchonov, J.J. Khamdamov, and Kh.Y. Utemuratova, “X-ray diffraction study of the phase state ofsilicon single crystals doped with manganese,” New Materials, Compounds and Applications, 7(2), 93-99 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v7n2/Utamuradova_et_al.pdf
M.A. Lourenço, Z. Mustafa, W. Luduczak, L. Wong, R.M. Gwilliam, and K.P. Homewood, “High temperature dependence Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions,” Optics Letters, 38(18), 3669-3672 (2013). https://doi.org/10.1364/OL.38.003669
M. Li, Y. Liu, Y. Zhang, X. Han, T. Zhang, Y. Zuo, C. Xie, et al., “Effect of the Annealing Atmosphere on Crystal Phase and Thermoelectric Properties of Copper Sulfide,” ACS Nano, 15(3), 4967-4978 (2021). https://doi.org/10.1021/acsnano.0c09866
S.Z. Zainabidinov, A.Y. Boboev, M.B. Rasulova, N.Y. Yunusaliyev, “X-ray diffraction analysis, optical characteristics, and electro-physical properties of the n-ZnO/p-NiO structure grown by the spray pyrolysis method,” New Materials, Compounds and Applications, 8(3) 411-421 (2024). https://doi.org/10.62476/nmca83411
S.Z. Zainabidinov, A.Y. Boboev, and N.Y. Yunusaliyev, “Effect of γ-irradiation on structure and lectrophysical properties of S doped ZnO films,” East Eur. J. Phys, (2), 321-326 (2024). https://doi.org/10.26565/2312-4334-2024-2-37
N.Y. Yunusaliyev, “The Gas-Sensitive Properties of Tin Dioxide Films,” Eur. J. Phys. (4), 439-442 (2024). https://doi.org/10.26565/2312-4334-2024-4-52
K. Valalaki, and A. Nassiopoulou, “Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K,” Nanoscale Research Letters, 9, 318 (2014). https://doi.org/10.1186/1556-276X-9-318
D. Goustouridis, G. Kaltsas, and A. Nassiopoulou, “A silicon thermal accelerometer without solid proof mass using porous silicon thermal isolation,” IEEE Sens. J. 7, 983–989 (2007). https://doi.org/10.1109/JSEN.2007.896559
J-H. Lee, G.A. Galli, and J.C. Grossman, “Nanoporous Si as an efficient thermoelectric material,” Nano Lett, 8, 3750-3754 (2008). https://doi.org/10.1021/nl802045f
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