Long-Term Relaxation Processes of Electrical Conductivity in Compensated Si<B,S> AND Si<B,Rh> Monocrystals
Abstract
In this paper, the processes of conductivity relaxation in Si<B,S> and Si<B,Rh> single crystals under different compensation conditions and concentrations are investigated. It is found that the relaxation process of photoconductivity in compensated Si<B,S> and Si<B,Rh> single crystals is described by a two-step exponential dependence with characteristic times of fast (τ₁) and slow (τ₂) relaxation, and these relaxation processes depend on the type of compensating impurity and its concentration. The relaxation parameters (τ₁, τ₂) were determined and it was found that the characteristic relaxation time of the photocurrent in the Si<B,Rh> sample is much shorter compared to the Si<B,S> sample. With increasing γ-irradiation dose, the second characteristic relaxation time (τ₂) first sharply increases and then reaches the saturation state at a certain high dose, which is explained by the limited number of deep energy defects formed under irradiation. The dependence of the relaxation time (τ₂) on the γ-radiation fluence increases with decreasing temperature (up to 77 K). The influence of fluctuations in the concentration of charge carriers on the relaxation process is investigated, and it is found that with a decrease in the resistivity of the starting material, i.e. at higher concentrations, the amplitude of fluctuations increases, which leads to an increase in the relaxation time.
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