The impact of structural and electro physical parameters of RTD on coefficient of DBKS
Keywords:
quantum - dimensional structure, electron energy, potential well, the active region, auxiliary barrier
Abstract
In this work provides a brief, introductory overview of the impact of structural and electro physical parameters of RTD on coefficient of DBQS. The research was conducted under changing of the following parameters: an external voltage that applied to the structure, the heights of the auxiliary barriers and the length of the active region RTD. One of the aims of this research is a comparative analysis of structures with different forms of the potential well, namely rectangular and parabolic, it is conditioned by interest to complementarity of implementation of the structures and the main subject of the article
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References
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Yoder P.D., Grupen M. Demonstration of intrinsic tristability in doublebarrier resonant tunneling diodes with the Wigner transport equation // IEEE Trans. Electron Dev. – 2010. – Vol. 57. – P. 3265–3274.
Anantram M.P., Lundstrom M.S. Modeling of Nanoscale Devices // Proceedings of the IEEE. – 2008. – Vol. 96. – P. 1511–1550.
Vurgaftman I., Meyer J.R. Band parameters for III-V compound semiconductors and their alloys // Appl. Phys. – 2001. – Vol. 89, 11. – P. 5815–5862.
Фистуль В.И. Туннельные диоды. – М.:Наука, 1962. Том LXXVII, Вып. 1. – 52 с.
Published
2017-10-03
Cited
How to Cite
Ибадуллин, М. М. (2017). The impact of structural and electro physical parameters of RTD on coefficient of DBKS. Visnyk of V.N. Karazin Kharkiv National University, Series “Radio Physics and Electronics”, (25), 17-20. Retrieved from https://periodicals.karazin.ua/radiophysics/article/view/9368
Section
Original Article
