Graded InGaP-InPAs Gunn diodes

И. П. Стороженко Национальный фармацевтический университет, ул. Пушкинская, 53, Харьков, 610027, Украина
Ю. В. Аркуша Харьковский национальный университет имени В. Н. Каразина, пл. Свободы, 4, Харьков, 61022, Украина

Keywords: Gunn diode, intervalley electron transfer, graded semiconductor, output power, domain, generation efficiency, the temperature model, terahertz electronics, InGaPAs

Abstract

The paper presents the results of the numerical experiments on efficient generation of electromagnetic waves in the range
from 18 to 80 GHz using graded In x Ga 1–x P-InP y As 1-y Gunn diodes. Our findings are the dependences generation
efficiency and output power on frequency for different distributions of GaP and InAs in In x Ga 1–x P-InP y As 1-y . We have
compared obtained results with similar Al x Ga 1–x As-GaAs-Ga 1–y In y As-diodes. The maximal obtained power in In x Ga 1–x P-
InP y As 1-y -diode is 11.3 kWcm –2 at a frequency of 40 GHz with an efficiency of 10.2 % at x = 0.6 and y = 0.6. For
comparison the InP-InP 0,4 As 0,6 diode has 9 kWcm –2 output power at a frequency of of 48 GHz with an efficiency of 5
%; In 0,5 Ga 0,5 P-InP diode has 7.6 kWcm –2 output power at a frequency of 43 GHz with an efficiency of 9 % and InP
diode has 1.9 kWcm –2 output power at a frequency of 69 GHz with an efficiency of 1.3 %.

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References

Стороженко І. П., Майборода І. М, Бабенко В. П., Кайдаш М. В. Огляд досягнень в терагерцових комунікаційних системах // Збірник наукових праць Національної академії Національної гвардії України. – 2016, № 1. – С. 45 – 48.

Khalid A. Li C., Papageogiou V. et al. In 0.53 Ga 0.47 As planar Gunn diodes operating at a fundamental frequency of 164 GHz // IEEE Electron Device Letters, –2013. – 34, № 1. – P. 39 – 41.

Maricar M. I. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. / M. I. Maricar, A. Khalid et al // Semiconductor Science and Technology. – 2015. – 30, № 1. 012001.

Couch N. R. The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment / N.R.Couch, P.H.Beton J.Kelly, M.M.Kerr // Solid State Electron. – 1988. – 31, – № 3 – 4. – Chapter 6. – Р. 613 – 616.

Forster A. Hot electron injector Gunn diode for advanced driver assistance systems / A. Forster , M. I. Lepsa, D. Freundt, J. Stock S. Montanari // Applied Physics A: Materials Science & Processing. – 2007. – 87. – P. 545-558.

Storozhenko I. P. Frequency Characteristics of diodes with intervalley electron transfer that based on variband In x(z) Ga 1-x(z) As with various cathode contacts // Journal of Communications Technology and Electronics. - 2007. - V. 52, №. 10. - P. 1253 – 1259.

Стороженко И.П., Аркуша Ю.В., Прохоров Э.Д. Энергетические и частотные характеристики GaAs диодов Ганна с Al x Ga 1-x As и GaP x As 1-x катодами // Радиофизика и электроника. - 2007. – Т. 12, № 3. –С. 579 – 583.

Стороженко И. П., Ярошенко А. Н., Аркуша Ю. В. Диоды Ганна на основе варизонных InBN и GaBN // Радиофизика и электроника. – 2014. – Т. 5 (19), № 2 . – С. 77 – 81.

Harry M. A., Kelly M. J., Dunn G. M. et al. Carr The free-space oscillation of heterojunctions GaAs/AlGaAs Gunn diodes as a design guide // Semicond. Sci. Techol. – 1999. – Vol. 14. – P. 19-20.

Sponer H. Couch N. R. Advances in hot electron injector Gunn diodes // GEC Journal of Reseach. – 1989. – Vol. 7, № 1. – P. 34–35.

Стороженко И.П. Особенности возникновения и дрейфа волн объёмного заряда в приборах с междолинным переносом электронов на основе варизонного GaP x(z) As 1-x(z) // Радиофизика и электроника. – 2007. – Т. 12, № 1. – С. 243 – 249.