Про підвищення потужності коротких діодів Ганна на основі варизонного InGaPAs

  • I. P. Stotozhenko Харківський національний технічний університет сільського господарства ім. Петра Василенка https://orcid.org/0000-0002-7344-242X
  • Yu. V. Arkusha Харківський національний університет імені В. Н. Каразіна https://orcid.org/0000-0002-6483-4341
Ключові слова: діод Ганна, моделювання, варизонний напівпровідник, ефект міждолинного переносу електронів, автоколивання, терагерцовий діапазон, гетероперехід


Background. The problem of development of the terahertz range with solid state devices remains relevant today. Gunn diodes, IMPATT diodes, resonant tunneling diodes and others are used as active elements. At frequencies above 100 GHz, these devices have a number of physical problems that limit maximum operation from above. One of the possibilities of creating high-frequency Gunn diodes is the use of various graded-gap multicomponent semiconductor compounds. Gunn diodes based on such compounds have higher generation efficiency and, accordingly, output power.

Objectives. Multicomponent semiconductors, the fractional composition of which varies in space, can improve the interaction of the electric field and electrons in devices operating on the effect of intervalley electron transfer. To achieve the best effect, such a semiconductor should have an optimal coordinate dependence between the nonequivalent valleys of the conduction band. Therefore, the aim of the work is to investigate the dependences of the effective generation of current oscillations in the terahertz range based on a graded-gap semiconductor  Ga1-x(z)Iny(z)Py(z)As1-y(z).

Materials and methods. Using mathematical modeling n+ - n - n+ Gunn diodes based on a graded-gap semiconductor      Ga1-x(z)Iny(z)Py(z)As1-y(z) with active region length being 1,0 µm and the concentration of ionized impurities in it being 9×1016 cm–3 are considered. The study was carried out based on the solving Boltzmann kinetic equation for a three-level  Г–L–X model of intervalley electron transfer. The resulting system of equations is solved numerically and allows one to get the dynamic distribution of the concentration of charge carriers, their energy, current density, electric field strength, and the voltage drop across the diode.

Results. It is shown that in graded-gap diodes based on Ga1-x(z)Iny(z)Py(z)As1-y(z) some domain current instability mode can be implemented. Unlike similar devices based on homogeneous semiconductors, such as GaAs, InP or Ga0,5In0,5As, in diodes based on graded-gap Ga1-x(z)Iny(z)Py(z)As1-y(z) undamped current oscillations occur. The maximum power of the main mode of such oscillations is 19 mW at a frequency of 95 GHz. Higher harmonics are present in the oscillations spectrum: the power of the second harmonic is 1,6 mW, and that of the third is   0,3 mW. The frequency and power of self-oscillations in graded-gap diodes depends on the composition of the semiconductor compound both in the anode and in the cathode and is observed at optimal values of the applied voltage.

Conclusions. Graded-gap Gunn diodes based on Ga1-x(z)Iny(z)Py(z)As1-y(z) with active region length being 1,0 µm and the concentration of ionized impurities in it being 9×1016 cm–3 are able to generate continuous current oscillations in a fairly wide frequency range due to efficient operation at the main, second and third harmonics. The research results can be used in the development of high-frequency devices for various scientific research.


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Біографії авторів

I. P. Stotozhenko, Харківський національний технічний університет сільського господарства ім. Петра Василенка

вул. Алчевських 44, Харків, Україна

Yu. V. Arkusha, Харківський національний університет імені В. Н. Каразіна

пл. Свободи, 4, Харків, 61022, Україна


Haiou Li, Zhihong Feng, Chak Wah Tang, Kei May Lau. Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD. IEEE Electron Device Letters. 2011;32(9):1224. https://doi.org/10.1109/LED.2011.2159824

Safumi Suzuki, Masahiro Asada, Atsushi Teranishi, Hiroki Sugiyama, Haruki Yokoyama. Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature. Applied Physics Letters. 2010;97:242102. https://doi.org/10.1063/1.3525834

Bozhkov VG. Semiconductor Detectors, Mixers, and Frequency Multipliers for the Terahertz Band. Radiophysics and Quantum Electronics. 2003;6:631-656.

Trew RJ. High-frequency solid-state electronic devices. IEEE Transactions on electron devices. 2005;52(5):638-649. https://doi.org/10.1109/TED.2005.845862

Eisele H, Naftaly M, Fletcher JR, Steenson DP, Stone MR. The Study of Harmonic-Mode Operation of GaAs TUNNETT Diodes and InP Gunn Devices Using a Versatile Terahertz Interferometer.in Proceedings of the 15th International Symposium on Space Terahertz; 2004. p. 336-400.

Eisele H, Naftaly M, Fletcher JR, Steenson DP, Stone MR. The Study of Harmonic-Mode Operation of GaAs TUNNETT Diodes and InP Gunn Devices Using a Versatile Terahertz Interferometer. IEEE Transaction on Microwave Theory and Techniques. 2004;52:2371.

Eisele H, Kamoua R. Submillimeter-wave InP Gunn devices IEEE Transaction on Microwave Theory and Techniques. 2004;52(10):2371-2378.

García S, Pérez S, Íñiguez-de-la-Torre I, Mateos J, González T. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes. Journal of Applied Physics. 2014;115:44510-1. https://doi.org/10.1063/1.4863399

Beall RB, Battersby SJ, Grecian PJ, Jones S, Smith G. W-band GaAs camel-cathode Gunn devices produced by MBE. Electron Letters. 1989;25(13):871-873.

Botsula ОV, Prokhorov ED, Storozhenko IP. Resonant-Tunneling Cathode for a Gunn Diode. Telecommunications and Radio Engineering. 2009;68(5):385-398. https://doi.org/10.1615/TelecomRadEng.v68.i5.20

Couch NR. Kelly MJ, Spooner H, Kerr TM. Hot electron injection in millimetre wave Gunn diodes. Solid-State Electronics. 1989;32(12):1685-1688. https://doi.org/10.1016/0038-1101(89)90295-5

Ata Khalid, Dunn GM, Macpherson RF, Thoms S, Macintyre D, Li C, et al. Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode. Journal of Applied Physics. 2014;115:114502. https://doi.org/10.1063/1.4868705

Storozhenko IP. Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1-x(z) with the Intervalley Electron Transport. Telecommunications and Engineering. 2008;67(10):881-894. https://doi.org/10.1615/TelecomRadEng.v67.i10.40

John Kevin Twynam. Gunn diode having a graded aluminum gallium arsenide active layer and Gunn oscillators U.S. patent US6111265A. 2000.

Förster A, Lepsa MI, Freundt D, Stock J, Montanari S. Hot electron injector Gunn diode for advanced driver assistance systems. Applied Physics A: Materials Science & Processing. 2007;87:545-558.

Moise H, Kelly MJ, Dunn G, Kearney M, Stephens J, Carr M. The free-space oscillation of heterojunction GaAs/AlGaAs Gunn diodes as a design guide. Semiconductor Science and Technology. 1999;14(5):L19-L20. https://doi.org/10.1088/0268-1242/14/5/101

Maricar MI, Khalid A, Dunn G, Cumming D, Oxley CH. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes Semiconductor Science and Technology. 2015;30:012001.

Storozhenko IP, Arkusha YuV, Prokhorov ED. Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1-xAs and GaPxAs1-x Cathodes. Telecommunications and Engineering, 2008;67(8):739-749. https://doi.org/10.1615/TelecomRadEng.v67.i8.70

Tomizawa K, Awano Y, Hashizume N. Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode. Electronics Letters. 1982;18(25):1067-1069. https://doi.org/10.1049/el:19820731

Friscourt M-R, Rolland P-A, Pernisek M. Heterojunction cathode contact transferred-electron oscillators. IEEE Electron Device Letters. 1985;6(10):497-499. https://doi.org/10.1109/EDL.1985.26207

Storozhenko IP, Kaydash MV. Gunn Diodes Based on Graded InGaP-InPAs. Journal of Nano- and Electronic Physics. 2018;10(4):04014. http://dx.doi.org/10.21272/jnep.10(4).04014

Botsula OV, Prykhodko KH, Zozulia VA. Aktyvni elementy na osnovi InGaAs zi statychnym katodnym domenom dlia terahertsovoho diapazonu [InGaAs Static Cathode Domain Active Elements for Terahertz Range]. Journal of Nano- and Electronic Physics. 2019;11(1):01006. [In Ukrainian].

Storozhenko IP. Static domain in a transferred-electron device based on graded-gap AlGaAS. Telecommunications and Radio Engineering. 2016;75(12):1101-1111. https://doi.org/10.1615/TelecomRadEng.v75.i12.60

Gruzinskis V, Starikov E, Shiktorov P. Monte Carlo simulation of THz frequency Gunn effect in GaAs MOSFET with excess of electrons in channel at impact ionization conditions. Lithuanian Journal of Physics. 2014;54(1):7-10. https://doi.org/10.3952/physics.v54i1.2836

Shiau YH, Peng YF, Cheng YC, Hu CK. . Multistability and Chaos in a Semiconductor Microwave Device with Time–Delay Feedback. Journal of the Physical Society of Japan. 2003;72:801-804. https://doi.org/10.1143/JPSJ.72.801

Botsula OV, Prokhorov ED. Analysis of Stochastic Current Oscillations in GaAs:Cr-Based Diodes. Telecommunicaition and Radio Engineering. 1998;52(1):90-69. https://doi.org/10.1615/TelecomRadEng.v52.i1.170

Prokhorov ED, Botsula OV, Klimenko OA. Generation and frequency multiplication by GaAs diodes with tunnel boundaries.Telecommunications and Radio Engineering. 2012;71(11):1045-1055. https://doi.org/10.1615/TelecomRadEng.v71.i11.80

Storozhenko I, Kaydash M, Yaroshenko O. The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors. in Proceedings of the IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET). 2018 Jul 2-5; Kiev, Ukraine p. 168-72. https://doi.org/10.1109/MMET.2018.8460236

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