Modeling the Density-of-States Spectrum Under Strain in Doped Silicon p‑Si<B, Mn>
Abstract
A deformation (strain) model of the spectrum of the density of localized states Nss(E,X) in p‑Si⟨B,Mn⟩ under uniaxial pressure X is presented. It is shown that the shifts of trap levels can be described by the deformation energy Ed = κX, a mechanical analogue of kT. At a fixed temperature T = 77 K, increasing X leads to a shift and restructuring of the spectrum: thermodonor (TD) levels move toward the conduction band, whereas manganese (Mn) levels shift toward the valence band, which agrees with the opposite trends observed in ρ(X) and μ(X).
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Copyright (c) 2026 M.A. Rakhmanov, I.G. Tursunov, O.O. Mamatkarimov, N.Yu. Sharibaev, S.S. Sharipbaev
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