Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation

  • Muhammed O. Abdulmalik Department of Physics, Confluence University of Science and Technology, Osara, Kogi State, Nigeria https://orcid.org/0000-0002-3250-7864
  • Eli Danladi Department of Physics, Federal University of Health Sciences, Otukpo, Benue State, Nigeri https://orcid.org/0000-0001-5109-4690
  • Rita C. Obasi Centre for Satellite Technology Development-NASRDA, Abuja, Nigeria
  • Philibus M. Gyuk Department of Physics, Kaduna State University, Kaduna, Nigeria
  • Francis U. Salifu Department of Physics, Confluence University of Science and Technology, Osara, Kogi State, Nigeria https://orcid.org/0000-0001-9015-2347
  • Suleiman Magaji Department of Electronics and Communications Engineering, Nigerian Defence Academy, Kaduna, Nigeria
  • Anselem C. Egbugha Operations Unit, Starsight Energy, Nigeria
  • Daniel Thomas Department of Physics, Kaduna State University, Kaduna, Nigeria
DOI: https://doi.org/10.26565/2312-4334-2022-4-12
Keywords: Perovskite solar cells, SCAPS–1D, CsSnGeI3, hole transport material, electron transport material

Abstract

The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device.

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Published
2022-12-06
Cited
How to Cite
Abdulmalik, M. O., Danladi, E., Obasi, R. C., Gyuk, P. M., Salifu, F. U., Magaji, S., Egbugha, A. C., & Thomas, D. (2022). Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation. East European Journal of Physics, (4), 125-135. https://doi.org/10.26565/2312-4334-2022-4-12
Issue
No. 4 (2022): East European Journal of Physics
Section
Original Papers

Copyright (c) 2022 Muhammed O. Abdulmalik, Eli Danladi, Rita C. Obasi, Philibus M. Gyuk, Francis U. Salifu, Suleiman Magaji, Anselem C. Egbugha, Daniel Thomas

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