Tunable Negative Differential Resistance in SnO2:Co Memristors on p-Si

  • Jamoliddin X. Murodov Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan; Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0006-3088-4881
  • Shavkat U. Yuldashev Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-2187-5960
  • Azamat O. Arslanov National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan https://orcid.org/0009-0000-4817-8770
  • Marguba S. Mirkamilova Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
  • Utkur E. Jurayev Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
DOI: https://doi.org/10.26565/2312-4334-2025-2-22
Keywords: SnO2 doped by cobalt, Memristor, Negative differential resistance switching, USP

Abstract

This study investigates the negative differential resistance (NDR) phenomenon in cobalt-doped tin dioxide (SnO2:Co) memristors fabricated on p-type silicon substrates. Using ultrasonic spray pyrolysis (USP), crystalline SnO2:Co thin films were deposited on p-Si substrates with a thin native SiO2 layer. The resulting memristor devices exhibit reproducible bipolar resistive switching between high-resistance (HRS) and low-resistance states (LRS). Key findings include the observation of a distinct NDR region in the current-voltage (I-V) characteristics, specifically in the positive voltage range from approximately +3V to +4V. Within this NDR region, current decreases despite increasing voltage, a characteristic hallmark of this effect. This behavior is attributed to the charge trapping and redistribution within the Co:SnO2 material. The consistent and reproducible nature of the observed NDR effect suggests the potential of SnO2:Co memristors for applications in advanced memory and switching technologies. This work contributes to the understanding of resistive switching mechanisms in Co-doped SnO2 thin films, which are promising materials for next-generation memory devices.

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Published
2025-06-09
Cited
How to Cite
Murodov, J. X., Yuldashev, S. U., Arslanov, A. O., Mirkamilova, M. S., & Jurayev, U. E. (2025). Tunable Negative Differential Resistance in SnO2:Co Memristors on p-Si. East European Journal of Physics, (2), 211-214. https://doi.org/10.26565/2312-4334-2025-2-22
Issue
No. 2 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Jamoliddin X. Murodov, Shavkat U. Yuldashev, Marguba S. Mirkamilova, Utkur E. Jurayev

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