Memristive Switching Behavior of Sol–Gel Derived Ga₂O₃ Thin Films
Abstract
Gallium oxide (Ga₂O₃) is an ultrawide bandgap semiconductor (~4.8–5.0 eV) that has recently gained considerable attention for next-generation nanoelectronic and memory devices owing to its superior breakdown field, chemical durability, and thermal robustness. In this study, Ga₂O₃ thin films were fabricated through a sol–gel spin-coating route and subsequently annealed at 1000 °C. X-ray diffraction revealed the structural evolution from an amorphous state to the stable monoclinic β-Ga₂O₃ phase after annealing. Electrical measurements exhibited reproducible bipolar resistive switching with an ON/OFF resistance ratio exceeding 102 and relatively low set/reset voltages. The observed switching is interpreted within the framework of conductive filament formation and rupture, predominantly governed by oxygen vacancy dynamics. The combination of low-cost synthesis, scalable processing, and robust memristive performance highlights sol–gel derived Ga₂O₃ thin films as strong contenders for future resistive random-access memory (RRAM) architectures and neuromorphic computing technologies.
Downloads
References
G. Akbar, A. Di Fatta, G. Rizzo, G. Ala, P. Romano, and A. Imburgia, “Comprehensive review of wide-bandgap (WBG) devices: SiC MOSFET and its failure modes affecting reliability,” PhysChem, 5(1), 10 (2025). https://doi.org/10.3390/physchem5010010
S. Musumeci, “Gallium nitride power devices in power electronics,” Energies, 16(9), 3894 (2023). https://doi.org/10.3390/en16093894
D. Kaur, A. Ghosh, and M. Kumar, “A strategic review on gallium oxide based power electronics: Recent progress and future prospects,” Materials Today: Proceedings, 33, 104244 (2022). https://doi.org/10.1016/j.matpr.2022.104244
F. Safieddine, et al., “Comparative study of the fundamental properties of Ga₂O₃,” Journal of Solid State Chemistry, 312, 123272 (2022). https://doi.org/10.1016/j.jssc.2022.123272
R.T. Velpula, B. Jain, and H.P.T. Nguyen, “Low-power multilevel resistive switching in β-Ga₂O₃ based RRAM devices,” Nanotechnology, 34(7), 075201 (2023). https://doi.org/10.1088/1361-6528/aca418
Z. Yang, K. Zhang, R. Guo, J. Wu, P. Li, Y. Chen, and W. Mi, “Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems,” Ceramics International, 46(13), 21141–21148 (2020). https://doi.org/10.1016/j.ceramint.2020.05.191
L.-W. Wang, C.-W. Huang, K.-J. Lee, S.-Y. Chu, and Y.-H. Wang, “Multi-level resistive Al/Ga₂O₃/ITO switching devices with interlayers of graphene oxide for neuromorphic computing,” Nanomaterials, 13(12), 1851 (2023). https://doi.org/10.3390/nano13121851
B. Oh, et al., “Wake-up effects on improving gradual switching and variation in resistive random-access memory (RRAM),” Electronics, 14(10), 1921 (2025). https://doi.org/10.3390/electronics14101921
K. Sato, Y. Hayashi, N. Masaoka, T. Tohei, and A. Sakai, “High-temperature operation of gallium oxide memristors up to 600 K,” Scientific Reports, 13, 1261 (2023). https://doi.org/10.1038/s41598-023-28075-4
H.J. Lee, J.-H. Kim, J. Choi, Y.S. Kim, and S.-N. Lee, “Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering,” Heliyon, 9(12), e23157 (2023). https://doi.org/10.1016/j.heliyon.2023.e23157
D. Cui, M. Pei, Z. Lin, H. Zhang, M. Kang, Y. Wang, X. Gao, et al., “Versatile optoelectronic memristor based on widebandgap Ga₂O₃ for artificial synapses and neuromorphic computing,” Nanomaterials, 15(2), 367 (2025). https://doi.org/10.3390/nano15020367
I. Rahaman, “Epitaxial growth of Ga₂O₃: A review,” Materials, 17(17), 5678 (2024). https://doi.org/10.3390/ma17175678
Y. Yang, “Compact Ga₂O₃ thin films deposited by plasma and RF magnetron sputtering,” Thin Solid Films, 757, 139139 (2022). https://doi.org/10.1016/j.tsf.2022.139139
T. Yamaguchi, Y. Oshima, H. Murakami, and S. Fujita, “Structural evolution and nucleation dynamics of RF-sputtered gallium oxide thin films,” APL Materials, 13(4), 041130 (2025). https://doi.org/10.1063/5.0205673
H. Zhang, D. Niu, J. Yang, X. Zhang, and W. Li, “β-Ga₂O₃ thin films via an inorganic sol–gel spin coating: Preparation and characterization,” Nanomaterials, 15(4), 277 (2025). https://doi.org/10.3390/nano15040277
V.A. Spiridonov, D.I. Panov, and X. Zhang, “Ga₂O₃ deposition methods by low-cost techniques: A review,” Journal of Sol-Gel Science and Technology, 101, 222–245 (2024). https://doi.org/10.1007/s10971-024-06543-1
J.X. Murodov, S.U. Yuldashev, A.O. Arslanov, M.S. Mirkamilova, and U.E. Jurayev, “Tunable negative differential resistance in SnO₂:Co memristors on p-Si,” East Eur. J. Phys., (2), 115–122 (2025). https://doi.org/10.26565/2312-4334-2025-2-22
J.X. Murodov, Sh.U. Yuldashev, A.O. Arslanov, N.U. Botirova, J.Sh. Xudoyqulov, R.Sh. Sharipova, R.A. Nusretov, et al., Resistive switching behavior of SnO₂/ZnO heterojunction thin films for non-volatile memory applications, East Eur. J. Phys. (3), 348–352 (2025). https://doi.org/10.26565/2312-4334-2025-3-34
W. Shan, W. Walukiewicz, K.M. Yu, J.W. Ager, E.E. Haller, H. Lu, and W.J. Schaff, “Structural evolution of Ga₂O₃ thin films: Amorphous to β-Ga₂O₃ transition upon high-temperature annealing,” AIP Conf. Proc. 1466, 197–200 (2012). https://doi.org/10.1063/1.4740301
N. Makeswaran, R. Arivazhagan, T. Balasubramanian, “Crystallization and phase stabilization of Ga₂O₃ nanofibers under thermal treatments (700–900 °C): Evidence of β-Ga₂O₃ formation at 900 °C,” Journal of Nanomaterials, 2022, 9476513 (2022). https://doi.org/10.1155/2022/9476513
A.M. Hassanien, A.A. Atta, M.M. El-Nahass, S.I. Ahmed, A.A. Shaltout, A.M. Al-Baradi, A. Alodhayb, and A.M. Kamal, “Effect of annealing temperature on structural and optical properties of gallium oxide thin films deposited by RF-sputtering,” J. Mater. Sci.: Mater. Electron., 31(9), 7355–7366 (2020). https://doi.org/10.1007/s10854-020-03203-7
L.B. Cheah, R.A.M. Osman, and P. Poopalan, “Ga₂O₃ thin films by sol-gel method and its optical properties,” AIP Conf. Proc. 2203, 020015 (2020). https://doi.org/10.1063/1.5142120
N.U. Botirova, A.O. Arslanov, G.B. Eshonkulov, J.X. Murodov, R.Sh. Sharipova, J.Sh. Khudoykulov, and Sh.U. Yuldashev, “Effect of SiO₂ and Post-Annealed Ga₂O₃ Buffer Layers on Ga₂O₃ Thin Film Growth and Properties,” Cryst. Growth Des. (2025) https://doi.org/10.1021/acs.cgd.5c01075
Copyright (c) 2025 Jamoliddin X. Murodov, Shavkat U. Yuldashev, Azamat O. Arslanov, Noiba U. Botirova, Javohir Sh. Xudoyqulov, Ilyos Kh. Khudaykulov, Marguba S. Mirkamilova, Utkur E. Jurayev, Azlarxon M. Tillaboyev
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
