Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

  • Jamoliddin X. Murodov Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan; Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0006-3088-4881
  • Shavkat U. Yuldashev Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0000-0002-2187-5960
  • Azamat O. Arslanov National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan https://orcid.org/0009-0000-4817-8770
  • Noiba U. Botirova Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan
  • Javohir Sh. Xudoyqulov National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan; Central Asian University, Tashkent, Uzbekistan https://orcid.org/0009-0005-4223-8863
  • Ra’no Sh. Sharipova Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan
  • Rafael A. Nusretov Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
  • Andrey A. Nebesniy National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan
  • Mukhammad P. Pirimmatov Institute of Physics and Technology, Tashkent, Uzbekistan https://orcid.org/0009-0000-4829-7817
DOI: https://doi.org/10.26565/2312-4334-2025-3-34
Keywords: SnO₂, ZnO, Resistive switching, Memristor, Thin films, Heterojunction, Non-volatile memory, Oxygen vacancies

Abstract

This study presents the fabrication and resistive switching (RS) performance of bilayer SnO2/ZnO thin films deposited via ultrasonic spray pyrolysis on p-type silicon substrates. The heterostructures were post-annealed at 450°C to enhance crystallinity and interfacial contact. Electrical characterization using I–V measurements revealed clear bipolar RS behavior without the need for an initial forming process. The devices exhibited a stable high resistance state (HRS) and low resistance state (LRS) across multiple cycles, with an ON/OFF ratio exceeding 10². The switching mechanism is attributed to the formation and rupture of conductive filaments likely induced by oxygen vacancies at the SnO₂/ZnO interface. Bandgap estimation using Tauc plots showed values of approximately 3.17 eV and 3.41 eV for ZnO and SnO2, respectively. These findings confirm the potential of SnO2/ZnO heterojunctions as efficient materials for next-generation non-volatile memory applications.

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Published
2025-09-08
Cited
How to Cite
Murodov, J. X., Yuldashev, S. U., Arslanov, A. O., Botirova, N. U., Xudoyqulov, J. S., Sharipova, R. S., Nusretov, R. A., Nebesniy, A. A., & Pirimmatov, M. P. (2025). Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications. East European Journal of Physics, (3), 348-352. https://doi.org/10.26565/2312-4334-2025-3-34
Issue
No. 3 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Jamoliddin X. Murodov, Shavkat U. Yuldashev, Azamat O. Arslanov, Noiba U. Botirova, Javohir Sh. Xudoyqulov, Ra’no Sh. Sharipova, Rafael A. Nusretov, Andrey A. Nebesniy, Mukhammad P. Pirimmatov

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