Methods of Correction of Spectral Characteristics of Silicon Photodetectors
Abstract
The paper investigates methods for shifting the spectral characteristics of silicon photodiodes toward longer wavelengths. It is established that with increasing the reverse bias voltage of the photodiode, the maximum spectral characteristic shifts towards longer wavelengths due to an increase in the collection coefficient of minority charge carriers, which determines the appearance of the spectral characteristic. With an increase in the lifetime of minor charge carriers and the resistivity of the photodiode base material, the maximum of its spectral characteristic also shifts towards longer wavelengths. Increasing the n+-junction depth of the photodiode reduces the effect of background short-wave radiation on the useful signal of the photodiode. Silicon cut-off adsorption light filters have been proposed that eliminate the influence of background radiation with a wavelength of less than 800 nm on the photodiode signal and have a transmittance of about 75% at a wavelength of 1064 nm.
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References
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