Silicon p-i-n Mesa-Photodiode Technology

  • Mykola S. Kukurudziak Rhythm Optoelectronics Shareholding Company, Chernivtsi, Ukraine; Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine https://orcid.org/0000-0002-0059-1387
  • Volodymyr M. Lipka Rhythm Optoelectronics Shareholding Company, Chernivtsi, Ukraine; Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine https://orcid.org/0009-0001-4419-3356
  • Vyacheslav V. Ryukhtin Rhythm Optoelectronics Shareholding Company, Chernivtsi, Ukraine
DOI: https://doi.org/10.26565/2312-4334-2024-3-47
Keywords: Silicon, Photodiode, Point Defects, Dislocations, Dark Current, Sensitivity

Abstract

The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route. Reducing the number of thermal operations reduces the degree of degradation of the electro-physical characteristics of silicon during heat treatment, which also contributes to reducing the density of surface states at the SiSiO2 interface. It is proposed to etch the mesa-profile by the method of chemical-dynamic polishing using a gold masking coating. The obtained photodiodes are cheaper than serial samples made by diffusion-planar technology and have higher sensitivity.

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Published
2024-09-02
Cited
How to Cite
Kukurudziak, M. S., Lipka, V. M., & Ryukhtin, V. V. (2024). Silicon p-i-n Mesa-Photodiode Technology. East European Journal of Physics, (3), 385-389. https://doi.org/10.26565/2312-4334-2024-3-47
Issue
No. 3 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Mykola S. Kukurudziak, Volodymyr M. Lipka, Vyacheslav V. Ryukhtin

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