Influence of silicon characteristics on the parameters of manufactured photonics cells
Abstract
The paper investigates the influence of the electrophysical characteristics of silicon on the final parameters of photoelectronic elements using p-i-n photodiodes as an example. It has been found that photodiode samples made on the basis of silicon with a higher resistivity are more prone to the formation of inversion channels at the oxide-semiconductor interface. Also, the dark current and responsivity of such photodiodes reach saturation at a lower voltage. It has also been shown that silicon-based photodiodes with a longer lifetime of non-basic charge carriers have lower dark current values. It has been shown that products with crystallographic orientation [111] have a much lower density of surface dislocations after technological operations than in the case of silicon with orientation [100]. It was also found that materials with different crystallographic orientations have different phosphorus diffusion coefficients. It has been experimentally established that a silicon oxide film grows faster on the surface of crystallographic orientation silicon [111] than on the surface of crystallographic orientation silicon [100]. This is due to the difference in the surface density of silicon atoms inherent in different crystallographic planes.
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