Study of Silicide Formation in Large Diameter Monocrystalline Silicon

  • Abdugafur T. Mamadalimov Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan
  • Makhmudkhodja Sh. Isaev National University of Uzbekistan, Tashkent Uzbekistan
  • Mukhammadsodik N. Mamatkulov Tashkent Institute of Chemical-Technology, Tashkent, Uzbekistan
  • Sardor R. Kodirov Urgench State University, Urgench, Uzbekistan
  • Jamshidjon T. Abdurazzokov Tashkent Medical Academy, Tashkent, Uzbekistan
Keywords: Dislocation-Free, Etching, Defects, Swirl, Heterogeneity, Dissolution, Super-Large Circuits, Hardening, Inclusion, Extrapolation


To study the formation of silicides, dislocation-free ingots of single-crystalline silicon with a diameter of 65÷110 mm, grown by the Czochralski method, were used. When studying such silicon samples using electron microscopy, small-angle scattering of CO2 laser radiation, three types of defects were identified: swirl defects, impurity micro inclusions and impurity clouds. It has been shown that silicide inclusions with sizes of 8-20 μm are formed in the near-surface layer of doped silicon, and they decrease linearly deeper into the crystal. The electrical parameters of semiconductor chromium silicide were determined: resistivity 1800 μOhm·cm, thermopower coefficient 180 μV/k, Hall constant 1.2·10-2 cm3/Kl, hole concentration 6·1019 cm-3, charge carrier mobility 18.6 cm2/V·s, band gap (0.29±0.02) еV.


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How to Cite
Mamadalimov, A. T., Isaev, M. S., Mamatkulov, M. N., Kodirov, S. R., & Abdurazzokov, J. T. (2024). Study of Silicide Formation in Large Diameter Monocrystalline Silicon. East European Journal of Physics, (2), 366-371.

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