Study of Silicide Formation in Large Diameter Monocrystalline Silicon
Abstract
To study the formation of silicides, dislocation-free ingots of single-crystalline silicon with a diameter of 65÷110 mm, grown by the Czochralski method, were used. When studying such silicon samples using electron microscopy, small-angle scattering of CO2 laser radiation, three types of defects were identified: swirl defects, impurity micro inclusions and impurity clouds. It has been shown that silicide inclusions with sizes of 8-20 μm are formed in the near-surface layer of doped silicon, and they decrease linearly deeper into the crystal. The electrical parameters of semiconductor chromium silicide were determined: resistivity 1800 μOhm·cm, thermopower coefficient 180 μV/k, Hall constant 1.2·10-2 cm3/Kl, hole concentration 6·1019 cm-3, charge carrier mobility 18.6 cm2/V·s, band gap (0.29±0.02) еV.
Downloads
References
L. Wang, J. Liu, Y. Li, G. Wei, Q. Li, Z. Fan, H. Liu, et al., “Dislocations in Crystalline Silicon Solar Cells,” Advanced Energy and Sustainability Research, 5(2), 2300240 (2024). https://doi.org/10.1002/aesr.202300240
K.P. Abdurakhmanov, Sh.B. Utamuradova, Kh.S. Daliev, S.G. Tadjy-Aglaeva, and R.M. Érgashev, “Defect-formation processes in silicon doped with manganese and germanium,” Semiconductors, 32(6), 606–607 (1998). https://link.springer.com/article/10.1134/1.1187448
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, Sh.Kh. Daliev, “Joint effect of Ni and Gf impurity atoms on the silicon solar cell photosensitivity,” Applied Solar Energy (English translation of Geliotekhnika), 41(1), 80–81 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
K.P. Abdurakhmanov, Kh.S. Daliev, Sh.B. Utamuradova, and N.Kh. Ochilova, “On defect formation in silicon with impurities of manganese and zinc,” Applied Solar Energy (English translation of Geliotekhnika), 34(2), 73–75 (1998).
A.A. Lebedev, “Deep level centers in silicon carbide: A review,” Semiconductors, 33(2), 107-130 (1999). https://link.springer.com/article/10.1134/1.1187657
Sh.B. Utamuradova, Kh.J. Matchonov, J.J. Khamdamov, and Kh.Y. Utemuratova, “X-ray diffraction study of the phase state of silicon single crystals doped with manganese,” New Materials, Compounds and Applications, 7(2), 93-99 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v7n2/Utamuradova_et_al.pdf
Kh.S. Daliev, Z.E. Bahronkulov, and J.J. Hamdamov, “Investigation of the Magnetic Properties of Silicon Doped with Rare-Earth Elements,” East Eur. J. Phys. (4), 167-171 (2023). https://doi.org/10.26565/2312-4334-2023-4-18
Z.T. Azamatov, Sh.B. Utamuradova, M.A. Yuldoshev, and N.N. Bazarbaev, East Eur. J. Phys. (2), 187-190 (2023), https://doi.org/10.26565/2312-4334-2023-2-19
S.B. Utamuradova, Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, and A.B. Bakhromov, “Investigations of Nonlinear Optical Properties of Lithium Niobate Crystals,” East Eur. J. Phys. (4), 147 (2023), https://doi.org/10.26565/2312-4334-2023-4-15
N.A. Turgunov, E.Kh. Berkinov, and R.M. Turmanova, “The effect of thermal annealing on the electrophysical properties of samples n-Si,” East European Journal of Physics, (3), 287–290 (2023). https://doi.org/10.26565/2312-4334-2023-3-26
Sh.B. Utamuradova, Z.T. Azamatov, and M.A. Yuldoshev, “Optical Properties of ZnO–LiNbO3 and ZnO–LiNbO3:Fe Structures,” Russian Microelectronics, 52(Suppl. 1), S99–S103 (2023). https://doi.org/10.1134/S106373972360022X
Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, and A.B. Bakhromov, “Investigation of Optical Characteristics of Photochromic Materials,” Physics AUC, 33, 139-145 (2023). https://cis01.central.ucv.ro/pauc/vol/2023_33/13_PAUC_2023_139_145.pdf
E.V. Astrova, V.B. Voronkov, V.A. Kozlov and A.A. Lebedev, “Process induced deep-level defects in high purity silicon,” Semiconductor Science and Technology, 13(5), 488(1998). https://doi.org/10.1088/0268-1242/13/5/008
K.S. Daliev, S.B. Utamuradova, I.K. Khamidzhonov, I.K. Mirzairova, and Z. Akimova, “Thermally induced deep centers in silicon doped with europium or lanthanum,” Inorganic Materials, 37(5), 436–438 (2001). https://link.springer.com/article/10.1023/A:1017556212569
S.B. Utamuradova, S.Kh. Daliev, S.A. Muzafarova, and K.M. Fayzullaev, “Effect of the diffusion of copper atoms in polycrystalline CdTe films doped with Pb atoms,” East European Journal of Physics, (3), 385–390 (2023). http://dx.doi.org/10.26565/2312-4334-2023-3-41
M. Schulz, “Determination of deep trap levels in silicon using ion-implantation and CV-measurements,” Appl. Phys. (4), 225 236 (1974). https://link.springer.com/article/10.1007/BF00884233
Kh.S. Daliev, Sh.B. Utamuradova, J.J. Khamdamov, and Z.E. Bahronkulov, “Electrophysical properties of silicon doped with lutetium,” Advanced Physical Research, 6(1), 42-49 (2024). http://dx.doi.org/10.62476/apr61.49
M.Sh. Isaev, T.U. Atamirzaev, M.N. Mamatkulov, U.T. Asatov, and M.A. Tulametov, “Study of the mobility and electrical conductivity of chromium silicide,” East European Journal of Physics, (4), 189–192 (2023). https://doi.org/10.26565/2312-4334-2023-4-22
A.Kh. Kasymov, and M.Sh. Isaev, “Thermoelectric properties of manganese silicide for thermoelectric converters of solar energy,” Applied Solar Energy (English translation of Geliotekhnika), 33(1), 54–58(1997).
K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and M.B. Bekmuratov, “Structural properties of silicon doped rare earth elements ytterbium,” East European Journal of Physics, (1), 375–379 (2024). https://doi.org/10.26565/2312-4334-2024-1
N.A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, “Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si,” E3S Web of Conferences, 402, 14018 (2023). https://doi.org/10.1051/e3sconf/202340214018
C. Argentin, M.J. Berg, M. Mazur, R. Ceolato, and J. Yon, “Assessing the limits of Rayleigh–Debye–Gans theory: Phasor analysis of a biosphere,” Journal of Quantitative Spectroscopy and Radiative Transfer, 264, 107550 (2021). https://doi.org/10.1016/j.jqsrt.2021.107550
M. Kozicki, “Formation and oxidation of implanted cobalt silicides on polycrystalline-silicon,” in: Electrical Engineering. 1988 Proceedings - Fifth International IEEE VLSI Multilevel Interconnection Conference, (Santa Clara, CA, USA), pp.198-204.
D.G. Truhlar, and A. Kohen, “Convex Arrhenius plots and their interpretation,” PNAS, 98(3), 848-851 (2001). https://doi.org/10.1073/pnas.98.3.848
A.P. Botha, S. Kritzinger, and R. Pretorius, “Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides,” Thin Solid Films, 141(1), 41-51 (1986). https://doi.org/10.1016/0040-6090(86)90317-2
Copyright (c) 2024 Abdugafur T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov, Sardor R. Kodirov, Jamshidjon T. Abdurazzokov
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
