Study of the Thermoelectric Properties of Chrome Silicides
Abstract
The temperature dependences of the thermoelectromotive force of chromium mono and disilicides in the temperature range 200℃÷+600℃ have been studied. For chromium disilicide, the dependence of the thermopower coefficient (α) on temperature (T) has three sections. Chromium monosilicide is characterized by a smooth increase in thermopower with increasing temperatures up to 200℃, and then its constancy. It was revealed that silicides rich in chromium atoms have lower thermopower values than silicides rich in silicon. The maximum thermo-EMF values of 110 μV/K and 190 μV/K were observed for chromium mono- and disilicides, respectively. It was revealed that for chromium silicides the dependence of the dimensionless parameter Q = Z∙T on temperature is linear. The possibility of predicting the technology of synthesis of semiconductor material with optimal thermoelectric properties using the dependence of thermopower on conductivity and the parameter Q on temperature is shown.
Downloads
References
S.B. Utamuradova, K.S. Daliev, S.Kh. Daliev, and U.K. Erugliev, “Capacitive spectroscopy of deep levels in silicon with samarium impurity,” East European Journal of Physics, (4), 303–306 (2023). https://doi.org/10.26565/2312-4334-2023-4-39
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint influence of impurity atoms of nickel and hafnium on photosensitivity of silicon solar cells,” Geliotekhnika, 1, 85–87 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
K.P. Abdurakhmanov, Kh.S. Daliev, Sh.B. Utamuradova, and N.Kh. Ochilova, “On defect formation in silicon with impurities of manganese and zinc,” Applied Solar Energy (English translation of Geliotekhnika), 34(2), 73–75 (1998).
M.Sh. Isaev, T.U. Atamirzaev, M.N. Mamatkulov, U.T. Asatov, and M.A. Tulametov, “Study of the mobility and electrical conductivity of chromium silicide,” East European Journal of Physics, (4), 189–192 (2023). http://dx.doi.org/10.26565/2312-4334-2023-4-22
N.A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, “Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si,” E3S Web of Conferences, 402, 14018 (2023). https://doi.org/10.1051/e3sconf/202340214018
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint effect of Ni and Gf impurity atoms on the silicon solar cell photosensitivity,” Applied Solar Energy (English translation of Geliotekhnika), 41(1), 80–81 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
K.P. Abdurakhmanov, Sh.B. Utamuradova, Kh.S. Daliev, S.G. Tadjy-Aglaeva, and R.M. Érgashev, “Defect-formation processes in silicon doped with manganese and germanium,” Semiconductors, 32(6), 606–607 (1998). https://doi.org/10.1134/1.1187448
M.Sh. Isaev, A.G. Gaibov, and A.A. Eshkulov, “Investigation of parameters of Schottky diodes based on chromium silicides,” Journal of Physics: Conference Series, 1679(2), 022029 (2020). https://doi.org/10.1088/1742-6596/1679/2/022029
K.S. Daliev, S.B. Utamuradova, I.K. Khamidzhonov, I.K. Mirzairova, Z. Akimova, “Thermally induced deep centers in silicon doped with europium or lanthanum,” Inorganic Materials, 37(5), 436–438 (2001). https://doi.org/10.1023/A:1017556212569
S.B. Utamuradova, S.Kh. Daliev, S.A. Muzafarova, K.M. Fayzullaev, “Effect of the diffusion of copper atoms in polycrystalline CdTe films doped with Pb atoms,” East European Journal of Physics, (3), 385–390 (2023). https://doi.org/10.26565/2312-4334-2023-3-4
M.Sh. Isaev, I.T. Bozarov, and A.I. Tursunov, “Investigation of thermally stimulated conductivity of cobalt silicide,” E3S Web of Conferences, 402, 14019 (2023). https://doi.org/10.1051/e3sconf/202340214019
Sh.B. Utamuradova, Sh.Kh. Daliev, E.M. Naurzalieva, X.Yu. Utemuratova. Investigation of defect formation in silicon doped with silver and gadolinium impurities by raman scattering spectroscopy. East European journal of physics, (3), 430-433 (2023). https://doi.org/10.26565/2312-4334-2023-3-47
S.B. Utamuradova, Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, A.B. Bakhromov, “Investigations of Nonlinear Optical Properties of Lithium Niobate Crystals,” East Eur. J. Phys. (4), 147-152 (2023), https://doi.org/10.26565/2312-4334-2023-4-15
Sh.B. Utamuradova, Z.T. Azamatov, M.A. Yuldoshev, “Optical Properties of ZnO–LiNbO3 and ZnO–LiNbO3:Fe Structures,” Russian Microelectronics. 52(Suppl. 1), S99-S103 (2023). https://doi.org/10.1134/S106373972360022X
Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, and A.B. Bakhromov, “Investigation of Optical Characteristics of Photochromic Materials,” Physics AUC, 33, 139-145 (2023). https://cis01.central.ucv.ro/pauc/vol/2023_33/13_PAUC_2023_139_145.pdf
N.A. Turgunov, E.Kh. Berkinov, and R.M. Turmanova, “The effect of thermal annealing on the electrophysical properties of samples n-Si,” East European Journal of Physics, (3), 287–290 (2023). https://doi.org/10.26565/2312-4334-2023-3-26
Sh.B. Utamuradova, Kh.J. Matchonov, J.J. Khamdamov, and Kh.Y. Utemuratova, “X-ray diffraction study of the phase state of silicon single crystals doped with manganese,” New Materials, Compounds and Applications, 7(2), 93-99 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/v7n2/Utamuradova_et_al.pdf
K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and M.B. Bekmuratov, “Structural properties of silicon doped rare earth elements ytterbium,” East European Journal of Physics, (1), 375–379 (2024). https://doi.org/10.26565/2312-4334-2024-1-37
K.S. Daliev, Z.E. Bahronkulov, and J.J. Hamdamov, “Investigation of the magnetic properties of silicon doped with rare-earth elements,” East European Journal of Physics, (4), 167–171 (2023). https://doi.org/10.26565/2312-4334-2023-4-18
M. Isaev, A. Gaibov, A. Eshkulov, and P. Saidachmetov, “Formation of nanosized films of chromium silicides on silicon surface,” Lecture Notes in Networks and Systems, 247, 1031–1041 (2022). https://doi.org/10.1007/978-3-030-80946-1_93
S.R. Boidedaev, G. Gulyamov, M.O. Qosimova, and M.G. Dadamirzayev, “Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field,” AIP Conference Proceedings, 2700, 050013 (2023). https://doi.org/10.1063/5.0124926
K. Youngsang, L. Andrej, M. Edgar, and R. Pramod, “Temperature dependence of thermopower in molecular junctions,” Appl. Phys. Lett. 109, 033102 (2016). https://doi.org/10.1063/1.4958999
M.K. Karimov, F.O. Kuryozov, S.R. Sadullaev, M.U. Otabaev, and S.B. Bobojonova, “Investigation of defect InP(001) surface by low energy ion scаttering spectroscopy,” Mater. Sci. Forum, 1049, 192-197 (2022). https://doi.org/10.4028/www.scientific.net/MSF.1049.192
U.O. Kutliev, M.U. Otabaev, and M.K. Karimov, “Investigation Ne ions scattering from the stepped InP(001)<ī10> surface,” Journal of Physics: Conference Series, 2388(1), 012092 (2022). https://doi.org/10.1088/1742-6596/2388/1/012092
Copyright (c) 2024 Abdugafur T. Mamadalimov, Makhmudkhodja Sh. Isaev, Ismoil T. Bozarov, Alisher E. Rajabov, Sojida K. Vakhabova
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
