CVC Structure of PtSi - Si<Pt>-M in a Wide Range of Temperatures
Abstract
In this work the mechanism of current flow during illumination with hν≥Eg in the temperature range of 77÷300 K is considered. It is established that in the PtSi – Si<Pt>-M structure in the temperature range of 77÷270 K the regime of space charge limited currents (SCLC) is realized. The current-voltage characteristics of the structures show areas of linear and quadratic dependences of current on voltage, as well as areas of a sharp increase in current. These features of the current-voltage characteristic are explained by the presence of deep level structures and sticking levels for charge carriers in the base region. From the temperature dependence of the SCLC, the concentration of adhesion levels was determined to be equal to (1.8÷3) 1015 cm-3 and the adhesion factor to be equal to 6.32·10-2. In the temperature range 77÷115 K at voltages 0.2÷1 V, the current-voltage characteristic obeys the law J ~ Un(n=3÷4), and above U – the law J ~ U6, followed by a transition to the quadratic law.
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Sh.B. Utamuradova, Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, and A.B. Bakhromov, “Investigations of Nonlinear Optical Properties of Lithium Niobate Crystals,” East Eur. J. Phys. (4), 147 (2023), https://doi.org/10.26565/2312-4334-2023-4-15
Sh.B. Utamuradova, Z.T. Azamatov, and M.A. Yuldoshev, Russian Microelectronics, 52(Suppl. 1), S99-S103 (2023). https://doi.org/10.1134/S106373972360022X
Z.T. Azamatov, M.A. Yuldoshev, N.N. Bazarbayev, and A.B. Bakhromov, “Investigation of Optical Characteristics of Photochromic Materials,” Physics AUC, 33, 139-145. (2023). https://cis01.central.ucv.ro/pauc/vol/2023_33/13_PAUC_2023_139_145.pdf
B.A. Lombo, “Deep levels in semiconductors,” S. Can. J. Chem. 63, 1666 (1985). http://dx.doi.org/10.1139/v85-279
A.A. Lebedev, “Deep level centers in silicon carbide: A review,” Semiconductors, 33(2), 107-130 (1999). https://doi.org/10.1134/1.1187657
K.P. Abdurakhmanov, Sh.B. Utamuradova, Kh.S. Daliev, S.G. Tadjy-Aglaeva, and R.M. Érgashev, “Defect-formation processes in silicon doped with manganese and germanium,” Semiconductors, 32(6), 606–607 (1998). https://doi.org/10.1134/1.1187448
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint effect of Ni and Gf impurity atoms on the silicon solar cell photosensitivity,” Applied Solar Energy (English translation of Geliotekhnika), 41(1), 80–81 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and M.B. Bekmuratov, “Structural properties of silicon doped rare earth elements ytterbium,” East European Journal of Physics, (1), 375–379 (2024). https://doi.org/10.26565/2312-4334-2024-1-37
S.B. Utamuradova, S.Kh. Daliev, E.M. Naurzalieva, and X.Yu. Utemuratova, “Investigation of defect formation in silicon doped with silver and gadolinium impurities by raman scattering spectroscopy,” East European Journal of Physics, (3), 430–433 (2023). https://doi.org/10.26565/2312-4334-2023-3-47
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint influence of impurity atoms of nickel and hafnium on photosensitivity of silicon solar cells,” Geliotekhnika, 1, 85–87 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
M.Sh. Isaev, I.T. Bozarov, and A.I. Tursunov, “Investigation of thermally stimulated conductivity of cobalt silicide,” E3S Web of Conferences, 402, 14019 (2023). https://doi.org/10.1051/e3sconf/202340214019
M.Sh. Isaev, T.U. Atamirzaev, M.N. Mamatkulov, U.T. Asatov, and M.A. Tulametov, “Study of the mobility and electrical conductivity of chromium silicide,” East European Journal of Physics, (4), 189–192 (2023). http://dx.doi.org/10.26565/2312-4334-2023-4-22
N.A. Turgunov, E.Kh. Berkinov, and R.M. Turmanova, “The effect of thermal annealing on the electrophysical properties of samples n-Si,” East European Journal of Physics, (3), 287–290 (2023). https://doi.org/10.26565/2312-4334-2023-3-26
P.R. Berger, G. Gulyamov, M.G. Dadamirzaev, M.K. Uktamova, and S.R. Boidedaev, “Influence of microwave and magnetic fields on the electrophysical parameters of a tunnel diode,” Romanian journal of physics, 69, 609 (2024). https://rjp.nipne.ro/accpaps/594CF41F1C91CCE710E9B3070FF760461CC68693.pdf
J.J. Liou, “Non-quasi-static capacitance of p/n junction space-charge regions,” Solid-State Electronics, 31(1), 81-86 (1998). http://dx.doi.org/10.1016/0038-1101(88)90088-3
S.B. Utamuradova, S.Kh. Daliev, S.A. Muzafarova, K.M. Fayzullaev, “Effect of the diffusion of copper atoms in polycrystalline CdTe films doped with Pb atoms,” East European Journal of Physics, (3), 385–390 (2023). https://doi.org/10.26565/2312-4334-2023-3-4
Copyright (c) 2024 Abdugafur T. Mamadalimov, Makhmudkhodja Sh. Isaev, Tokhirjon U. Atamirzaev, Shamsiddin N. Ernazarov, Mukhtor K. Karimov
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