Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

  • Jo`shqin Sh. Abdullayev National Research University TIIAME, Department of Physics and Chemistry, Tashkent, Uzbekistan https://orcid.org/0000-0001-6110-6616
  • Ibrokhim B. Sapaev National Research University TIIAME, Department of Physics and Chemistry, Tashkent, Uzbekistan; Western Caspian University, Scientific researcher, Baku, Azerbaijan https://orcid.org/0000-0003-2365-1554
DOI: https://doi.org/10.26565/2312-4334-2024-3-39
Keywords: Core-shell, Radial p-n junction, Cylindrical coordinates, Space charge density, Gallium Arsenide (GaAs)

Abstract

In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries. One such innovative structure is the radial p-n junction structure. In this work, we present a concept that submicron three-dimensional simulations were conducted on radial p-n junction structures based on GaAs material to investigate the influence of temperature ranging from 250K to 500K with a step of 50K on the electrophysical distribution, such as space charge, electro-potential, and electric field, in radial p-n junction structures, as well as various forward voltages. In particular, we focus on the shell radius within the structure: 0.5 μm and 1 μm for the shell. The modeling results were compared with the results obtained from solving the theoretical Poisson equation in the cylindrical coordinate system.

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References

Sh. Qian, S. Misra, J. Lu, Z. Yu, L. Yu, J. Xu. J. Wang, et al., Appl. Phys. Lett. 107, 043902 (2015). https://doi.org/10.1063/1.4926991

E. Gnani, A. Gnudi, S. Reggiani, and G. Baccarani, IEEE Trans. Electron Devices, 58(9), 2903 (2011). https://doi.org/10.1109/TED.2011.2159608

Z. Arefinia, A. Asgari, Solar Energy Materials and Solar Cells, 137, 146 (2015). https://doi.org/10.1016/j.solmat.2015.01.032

O.V. Pylypova, A.A. Evtukh, P.V. Parfenyuk, I.I. Ivanov, I.M. Korobchuk, O.O. Havryliuk, and O.Yu. Semchuk, Opto-Electronics Review, 27(2), 143 (2019). https://doi.org/10.1016/j.opelre.2019.05.003

R. Ragi, R.V.T. da Nobrega, U.R. Duarte, and M.A. Romero, IEEE Trans. Nanotechnol. 15(4), 627 (2016). https://doi.org/10.1109/TNANO.2016.2567323

R.D. Trevisoli, R.T. Doria, M. de Souza, S. Das, I. Ferain, and M.A. Pavanello, IEEE Trans. Electron Devices, 59(12), 3510 (2012). https://doi.org/10.1109/TED.2012.2219055

N.D. Akhavan, I. Ferain, P. Razavi, R. Yu, and J.-P. Colinge, Appl. Phys. Lett. 98(10), 103510 (2011). https://doi.org/10.1063/1.3559625

A.V. Babichev, H. Zhang, P. Lavenus, F.H. Julien, A.Y. Egorov, Y.T. Lin, and M. Tchernycheva, Applied Physics Letters, 103(20), 201103 (2013). https://doi.org/10.1063/1.4829756

D.H.K. Murthy, T. Xu, W.H. Chen, A.J. Houtepen, T.J. Savenije, L.D.A. Siebbeles, et al., Nanotechnology, 22(31), 315710 (2011). https://doi.org/10.1088/0957-4484/22/31/315710

B. Pal, K.J. Sarkar, and P. Banerji, Solar Energy Materials and Solar Cells, 204, 110217 (2020). https://doi.org/10.1016/j.solmat.2019.110217

I. Aberg, G. Vescovi, D. Asoli, U. Naseem, J.P. Gilboy, C. Sundvall, and L. Samuelson, IEEE Journal of Photovoltaics, 6(1), 185 (2016). https://doi.org/10.1109/JPHOTOV.2015.2484967

P. Dubey, B. Kaushik, and E. Simoen, IET Circuits, Devices & Systems, (2019). https://doi.org/10.1049/iet-cds.2018.5169

M.-D. Ko, T. Rim, K. Kim, M. Meyyappan, and C.-K. Baek, Scientific Reports, 5(1), 11646 (2015). https://doi.org/10.1038/srep11646

A.M. de Souza, D.R. Celino, R. Ragi, and M.A. Romero, Microelectronics J. 119, 105324 (2021). https://doi.org/10.1016/j.mejo.2021.105324

M.C. Putnam, S.W. Boettcher, M.D. Kelzenberg, D.B. Turner-Evans, J.M. Spurgeon, E.L. Warren, et al., Energy & Environmental Science, 3(8), 1037 (2010). https://doi.org/10.1039/C0EE00014K

S. Osono, Y. Uchiyama, M. Kitazoe, K. Saito, M. Hayama, A. Masuda, A. Izumi, et al., Thin Solid Films, 430, 165 (2003). https://doi.org/10.1016/S0040-6090(03)00100-7

R. Elbersen, R.M. Tiggelaar, A. Milbrat, G. Mul, H. Gardeniers, and J. Huskens, Advanced Energy Materials, 5(6), 1401745 (2014). https://doi.org/10.1002/aenm.201401745

A.A. Leonardi, M.J.L. Faro, and A. Irrera, A Review. Nanomaterials, 11(2), 383 (2021). https://doi.org/10.3390/nano11020383

A. Yesayan, F. Jazaeri, and J.-M. Sallese, IEEE Trans. Electron Devices, 63(3), 1368 (2016). https://doi.org/10.1109/TED.2016.2521359

Y. Li, M. Li, P. Fu, R. Li, D. Song, C. Shen, and Y. Zhao, Scientific Reports, 5(1), 11532 (2015). https://doi.org/10.1038/srep11532

J.C. Shin, D. Chanda, W. Chern, K.J. Yu, J.A. Rogers, and X. Li, IEEE Journal of Photovoltaics, 2(2), 129 (2012). https://doi.org/10.1109/JPHOTOV.2011.2180894

D. Choi, and K. Seo, Advanced Energy Materials, 11(5), 2003707 (2021). https://doi.org/10.1002/aenm.202003707

M. Shahram, T. Iman, and N.R. Mahdiyar, Optical and Quantum Electronics, 54(2), 115 (2022). https://doi.org/10.1007/s11082-021-03499-2

Bryan Melanson, M. Hartensveld, C. Liu, and J. Zhang, AIP Advances, 11(9), 095005 (2021). https://doi.org/10.1063/5.0061381

Y. Xiao, B. Zhang, H. Lou, L. Zhang, and X. Lin, IEEE Trans. Electron Devices, 63(5), 2176 (2016). https://doi.org/10.1109/TED.2016.2535247

B. Liu, J. Wang, Z. Li, Z. Sun, C. Li, J.-M. Seo, J. Li, et al., Nano Energy, 126, 109611 (2024). https://doi.org/10.1016/j.nanoen.2024.109611

R.K. Patnaik, and D.P. Pattnaik, in: 2016 International Conference on Signal Processing, Communication, Power and Embedded Systems (SCOPES), (Paralakhemundi, India, 2016). https://doi.org/10.1109/SCOPES.2016.7955628

A.C.E. Chia, and R.R. LaPierre, J. Appl. Phys. 112, 063705 (2012). https://doi.org/10.1063/1.4752873

S.M. Sze, and K.K. Ng, Physics of Semiconductor Devices, Third Edition, (John Wiley & Sons, Inc., 2007).

G.E. Cirlin, V.G. Dubrovskii, I.P. Soshnikov, N.V. Sibirev, Y.B. Samsonenko, A.D. Bouravleuv, J.C. Harmand, et al., Phys. Status Solidi (RRL), 3, 112 (2009). https://doi.org/10.1002/pssr.200903057

T.J. Kempa, R.W. Day, S.-K. Kim, H.-G. Park, and C.M. Lieber, Energy Environ. Sci. 6(3), 719 (2013). https://doi.org/10.1039/c3ee24182c

M.I. Khan, I.K.M.R. Rahman, and Q.D.M. Khosru, IEEE Trans. Electron Devices, 67(9), 3568 (2020). https://doi.org/10.1109/TED.2020.3011645

D.R. Bachman, S.E. Park, S. Thaveepunsan, J.S. Fitzsimmons, K.-N. An, and S.W. O’Driscoll, Journal of Orthopaedic Trauma, 1 (2018). https://doi.org/10.1097/BOT.0000000000001278

Published
2024-09-02
Cited
How to Cite
Abdullayev, J. S., & Sapaev, I. B. (2024). Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures. East European Journal of Physics, (3), 344-349. https://doi.org/10.26565/2312-4334-2024-3-39
Issue
No. 3 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Jo‘shqin Sh. Abdullayev, Ibrokhim B. Sapaev

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