Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

  • Jo`shqin Sh. Abdullayev National Research University TIIAME, Department of Physics and Chemistry, Tashkent, Uzbekistan https://orcid.org/0000-0001-6110-6616
  • Ibrokhim B. Sapaev National Research University TIIAME, Department of Physics and Chemistry, Tashkent, Uzbekistan; Western Caspian University, Baku, Azerbaijan https://orcid.org/0000-0003-2365-1554
DOI: https://doi.org/10.26565/2312-4334-2025-1-21
Keywords: Radial p-n junction, Light trap, External factors, Volt-farad, Heterostructures, Radial heterojunction (RHJ), Band gap narrowing (BGN), Cryogenic temperatures

Abstract

In this article, we analytically study the electrophysical features of the p-Si/n-GaAs radial heterojunction (RHJ) over a temperature range of 50 K to 500 K, in increments of 50 K while considering various doping concentrations. The analysis encompasses band gap narrowing (BGN), the differences in the band gap between GaAs and Si as a function of temperature, and the built-in potential relative to temperature. In particular, we focus on core p-Si with a radius of 0.5 μm and shell n-GaAs with a radius of 1 μm within the structure. Our findings indicate that the thickness of the depletion region in the p-Si/n-GaAs (RHJ) increases with rising temperature. The band gap difference between GaAs and Si is 0.31 eV at 300 K in our model, which is in good agreement with the experimental results. Additionally, the conduction band offset ∆EC=0.04 eV and the valence band offset ∆EV=0.27eV were calculated at 300 K. When the doping concentration changes from 2∙1015 to 2∙1018 band gap narrowing (BGN) decreases by 2 meV. Additionally, the built-in potential of the p-Si/n-GaAs (RHJ) decreases by 76 mV with increasing temperature.

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Published
2025-03-03
Cited
How to Cite
Abdullayev, J. S., & Sapaev, I. B. (2025). Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration. East European Journal of Physics, (1), 204-210. https://doi.org/10.26565/2312-4334-2025-1-21
Issue
No. 1 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 J.Sh. Abdullayev, I.B. Sapaev

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