Charge Transport Mechanism in Implanted p-GaSe:H+ Single Crystal
Abstract
The study analysed the impact of radiation defects on p-GaSe single crystal implanted with H+ ions (70 keV) on its charge transport mechanism. The research was conducted at 100 K and 300 K in an electric field of 102-104 V/cm. The study found that the activation energy of charge carriers injected at low temperatures and electric fields E < 103 V/cm ranged from 0.23-0.39 eV. This was observed due to the trapping of charge carriers in concentration traps of approximately 9·1013 cm-3, leading to monopolar injection. In the fields, E > 103 V/cm, a sharp increase in current was observed, which was explained by the thermal ionisation of local levels following the Frenkel mechanism. The study determined that the charge transport mechanism in GaSe:H+ crystals at low temperatures has a non-activated character.
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