Single and Multiphoton Optical Transitions in Atomically Thin Layers of Transition Metal Dichalcogenides

DOI: https://doi.org/10.26565/2312-4334-2024-1-40
Keywords: Polarized photon, Matrix element, Optical transitions, Two-Band approximation, Current carriers, Electron Hamiltonian, Momentum operator, Spin states

Abstract

The article discusses the production and properties of two-dimensional atomic layers of transition metal dichalcogenides (TMDs), focusing on the optical properties of monolayers. It begins with an introduction to the discovery of graphene production methods and the subsequent interest in TMDs. The basic properties of TMD monolayers, their crystal structure, and Brillouin zone are detailed. The article explores the energy spectrum of electrons in different valleys and the effective Hamiltonian describing states in parallel spin bands. The discussion extends to the matrix elements of interband optical transitions, including single-, two-, and three-photon transitions. Equations are provided to calculate probabilities of optical transitions, incorporating factors such as polarization vector, frequency of light, and temperature of the sample. Theoretical analysis of constituent matrix elements for these transitions is outlined, emphasizing quantum mechanical aspects. The article contributes researching of the optical behavior of transition metal dichalcogenides (TMDs) monolayers, particularly in structures with complex compositions.

Downloads

Download data is not yet available.

References

K.S. Novoselov, A.K. Geim, S.V. Morozov, D.E. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov, “Electric field effect in atomically thin carbon films,” science, 306(5696), 666-669 (2004). https://doi.org/10.1126/science.1102896

N. Huo, Y. Yang, Y.N. Wu, X.G. Zhang, S.T. Pantelides, and G. Konstantatos, “High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression,” Nanoscale, 10(31), 15071-15077 (2018). https://doi.org/10.1039/C8NR04416C

A. Taffelli, S. Dirè, A. Quaranta, and L. Pancheri, “MoS2 based photodetectors: a review,” Sensors, 21(8), 2758 (2021). https://doi.org/10.3390/s21082758

G.H. Shin, C. Park, K.J. Lee, H.J. Jin, and S.Y. Choi, “Ultrasensitive phototransistor based on WSe2–MoS2 van der Waals heterojunction,” Nano Letters, 20(8), 5741-5748 (2020). https://doi.org/10.1021/acs.nanolett.0c01460

T. Wang, F. Zheng, G. Tang, J. Cao, P. You, J. Zhao, and F. Yan, “2D WSe2 flakes for synergistic modulation of grain growth and charge transfer in tin‐based perovskite solar cells,” Advanced Science, 8(11), 2004315 (2021). https://doi.org/10.1002/advs.202004315

S.H. Su, W.T. Hsu, C.L. Hsu, C.H. Chen, M.H. Chiu, Y.C. Lin, W.-H. Chang, al., “Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys,” Frontiers in Energy Research, 2, 104870 (2014). https://doi.org/10.3389/fenrg.2014.00027

C. Ernandes, L. Khalil, H. Almabrouk, D. Pierucci, B. Zheng, J. Avila, P. Dudin, et al., “Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys,” npj 2D Mater. Appl. 5(1), 7 (2021). https://doi.org/10.1038/s41699-020-00187-9

E.L. Ivchenko, Optical Spectroscopy of Semiconductor Nanostructures, (Alpha Science International Ltd., Harrow, UK, 2005).

R.Y. Rasulov, V.R Rasulov, N.Z. Mamadalieva, and R.R. Sultanov, “Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures,” Russian Physics Journal, 63, 537-546 (2020). https://doi.org/10.1007/s11182-020-02067-7

M.M. Glazov, Electron and Nuclear Spin Dynamics in Semiconductor Nanostructures, (Oxford University Press, Oxford, 2018). https://doi.org/10.13140/RG.2.2.18718.56640

V.R. Rasulov, R.Ya. Rasulov, and I. Eshboltaev, “Linearly and circular dichroism in a semiconductor with a complex valence band with allowance for four-photon absorption of light,” Physics of the Solid State, 59(3), 463–468 (2017). https://doi.org/10.1134/S1063783417030283

R. Rasulov, V. Rasulov, and I. Eshboltaev, “On the Theory of the Ballistic Linear Photovoltaic Effect in Semiconductors of Tetrahedral Symmetry Under Two-Photon Absorption,” Russian Physics Journal, 59, 92–98 (2016). https://doi.org/10.1007/s11182-016-0742-7

Published
2024-03-05
Cited
How to Cite
Rasulov, R. Y., Rasulov, V. R., Urinova, K. K., Mamatova, M. A., & Akhmedov, B. B. (2024). Single and Multiphoton Optical Transitions in Atomically Thin Layers of Transition Metal Dichalcogenides. East European Journal of Physics, (1), 393-397. https://doi.org/10.26565/2312-4334-2024-1-40
Issue
No. 1 (2024): East European Journal of Physics
Section
Original Papers

Copyright (c) 2024 Rustam Y. Rasulov, Voxob R. Rasulov, Kamolakhon K. Urinova, Makhliyo A. Mamatova, Bakhodir B. Akhmedov

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Authors who publish with this journal agree to the following terms:

    • Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
    • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
    • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).