Single and Multiphoton Optical Transitions in Atomically Thin Layers of Transition Metal Dichalcogenides

Keywords: Polarized photon, Matrix element, Optical transitions, Two-Band approximation, Current carriers, Electron Hamiltonian, Momentum operator, Spin states


The article discusses the production and properties of two-dimensional atomic layers of transition metal dichalcogenides (TMDs), focusing on the optical properties of monolayers. It begins with an introduction to the discovery of graphene production methods and the subsequent interest in TMDs. The basic properties of TMD monolayers, their crystal structure, and Brillouin zone are detailed. The article explores the energy spectrum of electrons in different valleys and the effective Hamiltonian describing states in parallel spin bands. The discussion extends to the matrix elements of interband optical transitions, including single-, two-, and three-photon transitions. Equations are provided to calculate probabilities of optical transitions, incorporating factors such as polarization vector, frequency of light, and temperature of the sample. Theoretical analysis of constituent matrix elements for these transitions is outlined, emphasizing quantum mechanical aspects. The article contributes researching of the optical behavior of transition metal dichalcogenides (TMDs) monolayers, particularly in structures with complex compositions.


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K.S. Novoselov, A.K. Geim, S.V. Morozov, D.E. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov, “Electric field effect in atomically thin carbon films,” science, 306(5696), 666-669 (2004).

N. Huo, Y. Yang, Y.N. Wu, X.G. Zhang, S.T. Pantelides, and G. Konstantatos, “High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression,” Nanoscale, 10(31), 15071-15077 (2018).

A. Taffelli, S. Dirè, A. Quaranta, and L. Pancheri, “MoS2 based photodetectors: a review,” Sensors, 21(8), 2758 (2021).

G.H. Shin, C. Park, K.J. Lee, H.J. Jin, and S.Y. Choi, “Ultrasensitive phototransistor based on WSe2–MoS2 van der Waals heterojunction,” Nano Letters, 20(8), 5741-5748 (2020).

T. Wang, F. Zheng, G. Tang, J. Cao, P. You, J. Zhao, and F. Yan, “2D WSe2 flakes for synergistic modulation of grain growth and charge transfer in tin‐based perovskite solar cells,” Advanced Science, 8(11), 2004315 (2021).

S.H. Su, W.T. Hsu, C.L. Hsu, C.H. Chen, M.H. Chiu, Y.C. Lin, W.-H. Chang, al., “Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys,” Frontiers in Energy Research, 2, 104870 (2014).

C. Ernandes, L. Khalil, H. Almabrouk, D. Pierucci, B. Zheng, J. Avila, P. Dudin, et al., “Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys,” npj 2D Mater. Appl. 5(1), 7 (2021).

E.L. Ivchenko, Optical Spectroscopy of Semiconductor Nanostructures, (Alpha Science International Ltd., Harrow, UK, 2005).

R.Y. Rasulov, V.R Rasulov, N.Z. Mamadalieva, and R.R. Sultanov, “Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures,” Russian Physics Journal, 63, 537-546 (2020).

M.M. Glazov, Electron and Nuclear Spin Dynamics in Semiconductor Nanostructures, (Oxford University Press, Oxford, 2018).

V.R. Rasulov, R.Ya. Rasulov, and I. Eshboltaev, “Linearly and circular dichroism in a semiconductor with a complex valence band with allowance for four-photon absorption of light,” Physics of the Solid State, 59(3), 463–468 (2017).

R. Rasulov, V. Rasulov, and I. Eshboltaev, “On the Theory of the Ballistic Linear Photovoltaic Effect in Semiconductors of Tetrahedral Symmetry Under Two-Photon Absorption,” Russian Physics Journal, 59, 92–98 (2016).

How to Cite
Rasulov, R. Y., Rasulov, V. R., Urinova, K. K., Mamatova, M. A., & Akhmedov, B. B. (2024). Single and Multiphoton Optical Transitions in Atomically Thin Layers of Transition Metal Dichalcogenides. East European Journal of Physics, (1), 393-397.

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