Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation

  • Muhammed O. Abdulmalik Department of Physics, Confluence University of Science and Technology, Osara, Kogi State, Nigeria
  • Eli Danladi Department of Physics, Federal University of Health Sciences, Otukpo, Benue State, Nigeri
  • Rita C. Obasi Centre for Satellite Technology Development-NASRDA, Abuja, Nigeria
  • Philibus M. Gyuk Department of Physics, Kaduna State University, Kaduna, Nigeria
  • Francis U. Salifu Department of Physics, Confluence University of Science and Technology, Osara, Kogi State, Nigeria
  • Suleiman Magaji Department of Electronics and Communications Engineering, Nigerian Defence Academy, Kaduna, Nigeria
  • Anselem C. Egbugha Operations Unit, Starsight Energy, Nigeria
  • Daniel Thomas Department of Physics, Kaduna State University, Kaduna, Nigeria
Keywords: Perovskite solar cells, SCAPS–1D, CsSnGeI3, hole transport material, electron transport material


The toxic lead component as well as the expensive and less stable spiro-OMeTAD in perovskite solar cells (PSCs) pose a great deal of hindrance to their commercial viability. Herein, a computational approach towards modeling and simulation of all inorganic cesium tin-germanium triiodide (CsSnGeI3) based perovskite solar cell was proposed and implemented using solar cell capacitance simulator (SCAPS–1D) tool. Aluminium doped zinc oxide (ZnO:Al) and Copper Iodide (CuI) were used as electron and hole transport layers (ETL and HTL) respectively. The initial device without any optimization gave a power conversion efficiency (PCE) of 24.826%, fill factor (FF) of 86.336%, short circuit current density (Jsc) of 26.174 mA/cm2 and open circuit voltage (Voc) of 1.099 V. On varying the aforementioned parameters individually while keeping others constant, the optimal values are 1000 nm for absorber thickness, 1014 cm-3 for absorber layer defect density, 50 nm for ETL thickness, 1017 cm-3 for ETL doping concentration and 260 K for temperature. Simulating with these optimized values results to PCE of 25.459%, Voc of 1.145 V, Jsc of 25.241 mA/cm2, and a FF of 88.060%. These results indicate that the CsSnGeI3 is a viable alternative absorbing layer for usage in the design of a high PCE perovskite solar cell device.


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How to Cite
Abdulmalik, M. O., Danladi, E., Obasi, R. C., Gyuk, P. M., Salifu, F. U., Magaji, S., Egbugha, A. C., & Thomas, D. (2022). Numerical Study of 25.459% Alloyed Inorganic Lead-Free Perovskite CsSnGeI3-Based Solar Cell by Device Simulation. East European Journal of Physics, (4), 125-135.

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