Отримання високоякісних алмазних покриттів методами активованого газофазного осадження
Ключові слова:
алмазні покриття, метод хімічного газофазного осадження, швидкість росту покриття, дефектність покриття
Анотація
Проведено літературний огляд деяких особливостей та загальних закономірностей процесу отримання алмазних покриттів хімічним газофазним осадженням. Наведено теоретичні й експериментальні результати досліджень, що присвячені питанню отримання високоякісних алмазних покриттів з великою швидкістю росту. На підставі аналізу наведених даних визначені найбільш перспективні напрямки подальших досліджень при розробці процесів виробництва високоякісних алмазних матеріалів.
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Посилання
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Hassan Chatei, Jamal Bougdira, Mishel Remy, Patrick Alnot, Christian Bruch, Jan K. Kruger. Effect of nitrogen concentration on plasma reactivity and diamond growth in H2-CH4-N2 microwave discharge//Diamond and Related Materials. − 1997. − Vol. 6. − P. 107-119.
Hag S., Tunnicliffe D.L., Savage J.A. Optical characterization of textured microwave CVD diamond// Diamond and Related Materials. − 1994. − Vol. 3. − P. 593-597.
Jentsch H.-G., Rosiwal S.M., Singer R.F. High growth rate and high quality CVD diamond growth// Proceedings of the sixth applied diamond conference/second frontier carbon technology joint conference (ADC/FCT 2001) NASA/CP2001-210948. − 2001. − P. 333.
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Mokuno Y., Chayahara A., Soda Y., Horino Y., Fujimori N. Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD//Diamond and Related Materials.− 2005. − Vol. 14. − P. 1743-1746.
Tallaire A., Achard J., Silva F., Sussmann R.S., Gicquel A. Homoepitaxial deposition of high-quality thick diamond films: effect of growth parameters//Diamond and Related Materialsyu. − 2005. − Vol. 14. − P. 249-254.
Xue-Gui Qi, Ze-Shao Chen, Hong Xu. Construction and analysis of C-H-N-phase diagram for diamond chemical vapor deposition by simulation of gas-phase chemistry//Surface and Coatings Technology. − 2006. − Vol. 200. − P. 5268-5276.
Van Regemorter T., Larsson K. Effect of substitutional N on the diamond CVD growth process: A theoretical approach//Diamond and Related Materials. − 2008. − Vol. 17. − P. 1076-1079.
Zoya Mehmood Shah, Alison Mainwood. A theoretical study of the effect of nitrogen, boron and phosphorus impurities on the growth and morphology of diamond surfaces//Diamond and Related Materials.− 2008. − Vol. 17. − P. 1307-1310.
Varnin V.P. Rol’ termodinamicheskih i kineticheskih faktorov pri roste almaza iz gazovoj fazy //Tr. 1-go mezhdunar. sem. po almaznym plenkam. Tehnika sredstv svyazi. Seriya “tehnologiya proizvodstva i oborudovanie”. − 1991. − Vyp. 4. − S. 70-91.
Samojlovich M.I., Belyanin A.F. Almaznye i almazopodobnye uglerodnye plenki: formirovanie i stroenie//Sb. dokl. 15-go mezhdunar. simp. “Tonkie plenki v optike i elektronike”. Almaznye plenki i plenki rodstvennyh materialov (Harkov). − 2003. − S. 6-37.
Goodwin D.G. Scaling laws for diamond chemical-vapor deposition. I. Diamond surface chemistry//J. Appl. Phys. − 1993. − Vol. 74, No. 11. − P. 6888-6894.
Silva F., Achard J., Brinza O., Bonnin X., Hassouni K., Anthonis A., De Corte K., Barjon J. High quality, large surface area, homoepitaxial MPA CVD diamond growth//Diamond and Related Materials. − 2009. − Vol. 18. − P. 683-697.
Karpuhina T., Cherednichenko A., Bujlov L., Aleksenko A.E., Belyanin A.F. Issledovanie defektnyh centrov i primesej v polikristallicheskih plenkah almaza//Tr. 1-go mezhdunar. sem. po almaznym plenkam. Tehnika sredstv svyazi. Seriya “tehnologiya proizvodstva i oborudovani”. − 1991. − Vyp. 4. − S. 40-50.
Vyrovec I.I., Gricyna V.I., Dudnik S.F., Kutnij V.E., Opalev O.A., Rybka A.S., Strelnickij V.E. Issledovanie vliyaniya parametrov sinteza almaznyh pokrytij na skorost ih rosta i velichinu udelnogo elektricheskogo soprotivleniya//Voprosy atomnoj nauki i tehniki, Seriya: Fizika radiacionnyh povrezhdenij i radiacionnoe materialovedenie. − 2010. − T. 95, № 1. − S. 104-107.
Baik Y.J., Lee J.K., Lee W.S., Eun K.Y. Large area deposition of thick diamond film by directcurrent PACVD//Thin Solid Films. − 1999. − Vol. 341. P. 202-206.
Ermakova O.N., Polyakov V.I., Ermakov M.G., Perov P.I., Lazareva O.I., Sokolina G.A., Spitsin B.S. Electrical characteristic frequency dispersion of diamond polycrystalline films//Diamond and Related Materials. − 1993. − Vol. 2. − P. 1336-1340.
Sokolina G.A., Bujlov L.L., Teremeckaya I.G., Lazareva I.O. Vliyanie sostava rostovoj gazovoj fazy na ‘elektricheskie svojstva almaznyh plenok //Tr. 1-go mezhdunar. sem. po almaznym plenkam. Tehnika sredstv svyazi. Seriya ”tehnologiya proizvodstva i oborudovanie”. − 1991. − Vyp. 4. − S. 144-147.
Viharev A.L., Gorbachev A.M., Muchnikov A.B., Radischev D.B. Issledovaniya osazhdeniya tonkih monokristallicheskih almaznyh plenok v plazme SVCh razryada//Sb. dokl. XIII Mezhdunar. nauch.-tehn. konf. “Vysokie tehnologii v promyshlennosti Rossii”. XX Mezhdunar. simp. “Tonkie plenki v elektronike”. − 2008. − S. 374-379.
Toyota H., Nomura S., Mukasa S., Takahashi Y., Okuda S. Diamond synthesis by plasma chemical vapor deposition in liquid and gas//Diamond and Related Materials.−2010.− Vol. 19. − P. 418-422.
Hideaki Yamada, Akiyoshi Chayahara, Yoshiaki Mokuno, Shin-ichi Shikata. Numerical and experimental studies of high growth-rate over area with 1-inch in diameter under moderate inputpower by using MWPCVD//Diamond and Related Materials.− 2008. − Vol. 17. − P. 1062-1066.
Tallaire A., Achard J., Silva F., Gicquel A. Effect of increasing the microwave density in both continuous and pulsed wave mode on the growth of monocrystalline diamond films//Phys. stat. sol., (a). − 2005. − Vol. 202, No. 11. − P. 2059-2065.
Muchnikov A., Vikharev A., Gorbachev A., Radishev D. Comparative study of homoepitaxial single crystal diamond growth at continuous and pulsed mode of MPACVD reactor operation// Diamond and Related Materials. − 2011. − Vol. 20. − P. 1225-1228.
Tokuyuki Teraji, Mitsuhiro Hamada, Hideki Wada, Michinori Yamamoto, Kazuya Arima, Toshimichi Ito. High rate growth and electrical/optical properties of high- quality homoepitaxial diamond (100) films//Diamond and Related Materials. – 2005. − Vol. 14. − P. 255-260.
Hassan Chatei, Jamal Bougdira, Mishel Remy, Patrick Alnot, Christian Bruch, Jan K. Kruger. Effect of nitrogen concentration on plasma reactivity and diamond growth in H2-CH4-N2 microwave discharge//Diamond and Related Materials. − 1997. − Vol. 6. − P. 107-119.
Hag S., Tunnicliffe D.L., Savage J.A. Optical characterization of textured microwave CVD diamond// Diamond and Related Materials. − 1994. − Vol. 3. − P. 593-597.
Jentsch H.-G., Rosiwal S.M., Singer R.F. High growth rate and high quality CVD diamond growth// Proceedings of the sixth applied diamond conference/second frontier carbon technology joint conference (ADC/FCT 2001) NASA/CP2001-210948. − 2001. − P. 333.
Vyrovec I.I., Gricyna V.I., Dudnik S.F., Kutnij V.E., Opalev O.A., Rybka A.S., Reshetnyak E.N., Strelnickij V.E. Osobennosti osazhdeniya polikristallicheskih almaznyh plenok dlya detektorov ioniziruyuschego izlucheniya//Tr. 18 Mezhdunar. кonf. po fizike radiacionnyh yavlenij i radiacionnomu materialovedeniyu (Alushta, Krym). − 2008. − S. 374-375.
Qi Liang, Chih-shiue Yan, Yufei Meng, Joseph Lai, Szczesny Krasnicki, Ho-kwang Mao, Russell J. Hemley. Recent advances in high-growth rate single-crystal CVD diamond//Diamond and Related Materials. − 2009. – Vol. 18. − P. 698703.
Mokuno Y., Chayahara A., Soda Y., Horino Y., Fujimori N. Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD//Diamond and Related Materials.− 2005. − Vol. 14. − P. 1743-1746.
Tallaire A., Achard J., Silva F., Sussmann R.S., Gicquel A. Homoepitaxial deposition of high-quality thick diamond films: effect of growth parameters//Diamond and Related Materialsyu. − 2005. − Vol. 14. − P. 249-254.
Xue-Gui Qi, Ze-Shao Chen, Hong Xu. Construction and analysis of C-H-N-phase diagram for diamond chemical vapor deposition by simulation of gas-phase chemistry//Surface and Coatings Technology. − 2006. − Vol. 200. − P. 5268-5276.
Van Regemorter T., Larsson K. Effect of substitutional N on the diamond CVD growth process: A theoretical approach//Diamond and Related Materials. − 2008. − Vol. 17. − P. 1076-1079.
Zoya Mehmood Shah, Alison Mainwood. A theoretical study of the effect of nitrogen, boron and phosphorus impurities on the growth and morphology of diamond surfaces//Diamond and Related Materials.− 2008. − Vol. 17. − P. 1307-1310.
Опубліковано
2017-07-28
Як цитувати
Грицына, В. И., Дудник, С. Ф., Кошевой, К. И., Опалев, О. А., & Стрельницкий, В. Е. (2017). Отримання високоякісних алмазних покриттів методами активованого газофазного осадження. Журнал фізики та інженерії поверхні, 11(1), 63 - 77. вилучено із https://periodicals.karazin.ua/pse/article/view/8786
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