Modification of the Kinetic Parameters of SnSe by Terbium Doping

  • T.A. Jafarov Azerbaijan State Pedagogical University, Baku, Azerbaijan
  • O.M. Gasanov Azerbaijan State Pedagogical University, Baku, Azerbaijan https://orcid.org/0000-0003-4888-7686
  • Kh.A. Adgezalova Azerbaijan State Pedagogical University, Baku, Azerbaijan
  • H.A. Aslanov Azerbaijan State Pedagogical University, Baku, Azerbaijan
  • J.I. Huseynov Azerbaijan State Pedagogical University, Baku, Azerbaijan https://orcid.org/0000-0002-4498-2400
  • I.I. Abbasov Azerbaijan State Oil and Industry University, Baku, Azerbaijan https://orcid.org/0000-0001-8111-2642
  • R.Sh. Ragimov Baku State University, Baku, Azerbaijan
Keywords: Solid solutions, Kinetic parameters, Doping, Thermoelectric properties, Seebeck coefficient, Electrical conductivity, Thermal conductivity, Carrier concentration, Conductivity type transition

Abstract

The kinetic parameters of solid solutions TbxSn1-xSe (0 ≤ x ≤ 0.05), grown by the Bridgman method were investigated at 300 K. It was found that doping with Tb significantly affects the electrical conductivity, Hall coefficient, Seebeck coefficient (thermoelectric power), thermal conductivity, and the concentration and mobility of charge carriers. At low Tb concentrations, a transition from p-type to n-type conductivity is observed, accompanied by a non-monotonic change in the Hall coefficient and the sign of the Seebeck coefficient. Electrical and thermal conductivities decrease due to enhanced scattering at defects caused by introducing Tb. The obtained data are important for controlling the properties of SnSe in its thermoelectric applications.

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Published
2025-12-08
Cited
How to Cite
Jafarov, T., Gasanov, O., Adgezalova, K., Aslanov, H., Huseynov, J., Abbasov, I., & Ragimov, R. (2025). Modification of the Kinetic Parameters of SnSe by Terbium Doping. East European Journal of Physics, (4), 407-414. https://doi.org/10.26565/2312-4334-2025-4-39