Modification of the Kinetic Parameters of SnSe by Terbium Doping
Abstract
The kinetic parameters of solid solutions TbxSn1-xSe (0 ≤ x ≤ 0.05), grown by the Bridgman method were investigated at 300 K. It was found that doping with Tb significantly affects the electrical conductivity, Hall coefficient, Seebeck coefficient (thermoelectric power), thermal conductivity, and the concentration and mobility of charge carriers. At low Tb concentrations, a transition from p-type to n-type conductivity is observed, accompanied by a non-monotonic change in the Hall coefficient and the sign of the Seebeck coefficient. Electrical and thermal conductivities decrease due to enhanced scattering at defects caused by introducing Tb. The obtained data are important for controlling the properties of SnSe in its thermoelectric applications.
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Copyright (c) 2025 T.A. Jafarov, O.M. Gasanov, Kh.A. Adgezalova, H.A. Aslanov, J.I. Huseynov, I.I. Abbasov, R.Sh. Ragimov

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