Study of the Inhomogeneities of Overcompensed Silicon Samples Doped with Manganese
Abstract
Inhomogeneities in the near-surface region of diffusion-doped silicon with manganese atoms were studied using the local photo-EMF method and photovoltage and photoconductivity signals were detected. It has been established that the inhomogeneous region is located at a depth of 3÷35 μm from the surface of the crystal. The magnitude of photo-EMF in these layers does not change monotonically from point to point. It was revealed that the photo-EMF spectra depend on the wavelength of the irradiated light, while the shape of the areas and their shift are related to the penetration depth of laser radiation. The photo-EMF signal increases to a depth of ~25 µm from the surface, then saturates and from ~30 µm smoothly decreases and completely disappears at a depth of ~40 µm. The magnitude of the internal electric field was determined using the Tauc method. A model of the structure of the near-surface region of diffusion-doped silicon with manganese is proposed.
Downloads
References
B.A. Lombo, “Deep levels in semiconductors,” S. Can. J. Chem. 63, 1666 (1985). http://dx.doi.org/10.1139/v85-279
A.A. Lebedev, “Deep level centers in silicon carbide: A review,” Semiconductors, 33(2), 107-130 (1999). https://doi.org/10.1134/1.1187657
K.P. Abdurakhmanov, Sh.B. Utamuradova, Kh.S. Daliev, S.G. Tadjy-Aglaeva, and R.M. Érgashev, “Defect-formation processes in silicon doped with manganese and germanium,” Semiconductors, 32(6), 606–607 (1998). https://doi.org/10.1134/1.1187448
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint effect of Ni and Gf impurity atoms on the silicon solar cell photosensitivity,” Applied Solar Energy (English translation of Geliotekhnika), 41(1), 80–81 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
K.S. Daliev, S.B. Utamuradova, J.J. Khamdamov, and M.B. Bekmuratov, “Structural properties of silicon doped rare earth elements ytterbium,” East European Journal of Physics, (1), 375–379 (2024). https://doi.org/10.26565/2312-4334-2024-1-37
S.B. Utamuradova, S.Kh. Daliev, E.M. Naurzalieva, and X.Yu. Utemuratova, “Investigation of defect formation in silicon doped with silver and gadolinium impurities by raman scattering spectroscopy,” East European Journal of Physics, (3), 430–433 (2023). https://doi.org/10.26565/2312-4334-2023-3-47
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, “Joint influence of impurity atoms of nickel and hafnium on photosensitivity of silicon solar cells,” Applied Solar Energy (English translation of Geliotekhnika), 1, 85–87 (2005). https://www.researchgate.net/publication/294234192_Joint_effect_of_Ni_and_Gf_impurity_atoms_on_the_silicon_solar_cell_photosensitivity
M.Sh. Isaev, I.T. Bozarov, and A.I. Tursunov, “Investigation of thermally stimulated conductivity of cobalt silicide,” E3S Web of Conferences, 402, 14019 (2023). https://doi.org/10.1051/e3sconf/202340214019
M.Sh. Isaev, T.U. Atamirzaev, M.N. Mamatkulov, U.T. Asatov, and M.A. Tulametov, “Study of the mobility and electrical conductivity of chromium silicide,” East European Journal of Physics, (4), 189–192 (2023). https://doi.org/10.26565/2312-4334-2023-4-22
Sh.B. Utamuradova, Z.T. Azamatov, and M.A. Yuldoshev, “Optical Properties of ZnO–LiNbO3 and ZnO–LiNbO3:Fe Structures,” Russian Microelectronics, 52(Suppl. 1), S99–S103 (2023). https://doi.org/10.1134/S106373972360022X
N.A. Turgunov, E.Kh. Berkinov, and R.M. Turmanova, “The effect of thermal annealing on the electrophysical properties of samples n-Si,” East European Journal of Physics, (3), 287–290 (2023). https://doi.org/10.26565/2312-4334-2023-3-26
P.R. Berger, G. Gulyamov, M.G. Dadamirzaev, M.K. Uktamova, and S.R. Boidedaev, “Influence of microwave and magnetic fields on the electrophysical parameters of a tunnel diode,” Romanian journal of physics, 69, 609 (2024). (Accepted Manuscripts)
J.J. Liou, “Non-quasi-static capacitance of p/n junction space-charge regions,” Solid-State Electronics, 31(1), 81-86 (1998). http://dx.doi.org/10.1016/0038-1101(88)90088-3
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
