Study of the Inhomogeneities of Overcompensed Silicon Samples Doped with Manganese

  • M.Sh. Isaev National University of Uzbekistan, Tashkent, Uzbekistan https://orcid.org/0009-0007-9559-5834
  • U.T. Asatov Tashkent Institute of Chemical Technology, Tashkent, Uzbekistan
  • M.A. Tulametov Tashkent Institute of Chemical Technology, Tashkent, Uzbekistan
  • S.R. Kodirov Urgench State University, Urgench, Uzbekistan
  • A.E. Rajabov Urgench branch of Tashkent University of Information Technologies named after Muhammad al-Khwarizmi
Keywords: Diffusion, Inclusion, Heat Treatment, Inhomogeneity, Photo-EMF, Photoprobe, Scattering, Gradient, Twin

Abstract

Inhomogeneities in the near-surface region of diffusion-doped silicon with manganese atoms were studied using the local photo-EMF method and photovoltage and photoconductivity signals were detected. It has been established that the inhomogeneous region is located at a depth of 3÷35 μm from the surface of the crystal. The magnitude of photo-EMF in these layers does not change monotonically from point to point. It was revealed that the photo-EMF spectra depend on the wavelength of the irradiated light, while the shape of the areas and their shift are related to the penetration depth of laser radiation. The photo-EMF signal increases to a depth of ~25 µm from the surface, then saturates and from ~30 µm smoothly decreases and completely disappears at a depth of ~40 µm. The magnitude of the internal electric field was determined using the Tauc method. A model of the structure of the near-surface region of diffusion-doped silicon with manganese is proposed.

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Published
2024-06-01
Cited
How to Cite
Isaev, M., Asatov, U., Tulametov, M., Kodirov, S., & Rajabov, A. (2024). Study of the Inhomogeneities of Overcompensed Silicon Samples Doped with Manganese. East European Journal of Physics, (2), 341-344. https://doi.org/10.26565/2312-4334-2024-2-40