Analysis of the Influence of Formation of Pd Silicides on Surface Layers of Si on the Diffusion of Atoms of Contacting Metal
Abstract
4-probe measurements of surface resistivity, measurements of dark and light current-voltage characteristics, the possibilities of using a thin PdSi film to obtain perfect nano-sized ohmic contacts on the Si(111) surface have been investigated using Auger electron spectroscopy methods in combination with ion etching of the surface. It has been shown that the depth of Ni diffusion in the Ni-Si (111) system is 400 ‑ 500 Å at indoor temperature, and 70 – 80 Å in the Ni-PdSi-Si (111) system. The quality of the ohmic contact in the latter case does not change up to T = 800 K and withstands luminous flux illumination up to F = 1100 lux. It is shown that the resistivity of the PdSi film passes through a minimum at T = 900 – 1000 K. An analysis of the results obtained will be given in the article.
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References
L.L. Chang, and K. Ploog, Molecular beam epitaxy and heterostructures, Part of the book series: NSSE, vol. 87 (1985). https://doi.org/10.1007/978-94-009-5073-3
D.A. Tashmukhamedova, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 70(8), 1230 (2006). https://elibrary.ru/item.asp?id=9296378. (in Russian)
Z.Yu. Gotra, Technology of microelectronic devices: Handbook, (Radio and communication, Moscow, 1986). https://rutracker.org/forum/viewtopic.php?t=6090709 (in Russian)
B.E. Umirzakov, Zh.Sh. Sodikjanov, D.A. Tashmukhamedova, A.A. Abduvayitov, and E. Rabbimov, Technical Physics Letters, 47(8), 620-623 (2021). https://doi.org/10.1134/S1063785021060262
D.A. Tashmukhamedova, and M.B. Yusupjanova, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 10(6). 1338-1340 (2016). https://doi.org/10.1134/S1027451016050438
L.B. Gulina, and V.P. Tolstoy, Synthesis by ion layering, in: Intl. conf. Glass and solid electrolytes, (St. Petersburg, 1999). pp. 149.
B.E. Umirzakov, D.A. Tashmukhamedova, and Kh.Kh. Kurbanov, Tech. Phys. 58, 841 (2013). https://doi.org/10.1134/S1063784213060261
Kh.Kh. Boltaev, D.A. Tashmukhamedova, and B.E. Umirzakov, Journal of Surface Investigation. Xray, Synchrotron and Neutron Techniques, 8(2). 326 (2014). https://doi.org/10.1134/S1027451014010108
Y.S. Ergashov, D.A. Tashmukhamedova, and B. E. Umirzakov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 11, 480 (2017). https://doi.org/10.1134/S1027451017020252
P.N. Krilov, A.B. Fedotov, and I.V. Fedotova, “The formation of Pd-Si multilayer interface during heat treatment”, Journal Chemical Physics and Mesoscopics, 17(2), 282–286 (2015). https://www.mathnet.ru/php/archive.phtml?wshow=paper&jrnid=chphm&paperid=35&option_lang=eng&ysclid=lxbrsftlbx495807277. (in Russian)
G. Li, X. Zhang, H. Lu, Yanchao, et al., Ethanol sensing properties and reduced sensor resistance using porous Nb2O5-TiO2 n-n junction nanofibers,” Sensors and Actuators B: Chemical, 283, 602-612 (2019). https://doi.org/10.1016/j.snb.2018.12.074
G.O. Silakov, E.N. Lazorkina, S.A. Gavrilov, O.V. Volovlikova, A.V. Zheleznyakova, and A.A. Dudin, Russian Microelectronics, 52, 572–576 (2023). https://doi.org/10.1134/S1063739723070259
S.V. Tomilin, and A.S. Yanovsky, Journal of Nano-and Electronic Physics, 4(1), 01013 (2012). https://core.ac.uk/reader/14056570
N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, V.A. Fesunenko, and A.V. Tsvir, Technology and design in electronic equipment, (4), 35 (1999).
L.P. Anufriev, V.V. Baranov, Ya.A. Soloviev, and M.V. Tarasikov, Technology and design in electronic equipment, (4), 55-56, (2005). http://dspace.nbuv.gov.ua/handle/123456789/53610. (in Russian)
A.I. Blesman, and R.B. Burlakov, Omsk Scientific Bulletin, 1(163), (2019). https://doi.org/10.25206/1813-8225-2019-163-50-54
V.А. Saladukha, V.А. Pilipenko, V.А. Gorushko, and V.А. Philipenya, “The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters,” 119(1), 62-66 (2019). https://libeldoc.bsuir.by/bitstream/123456789/34383/1/Solodukha_Vliyaniye.PDF (in Russian)
T. Dong, et al., JACS Au, 3(4), 1230-1240 (2023). 10.1021/jacsau.3c00093
D.M. Muradkabilov, D.A. Tashmukhamedova, and B.E. Umirzakov, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 7(5), 967 (2013). https://doi.org/v10.1134/S1027451013050376
B.E. Umirzakov, Poverkhn.: Fiz., Khim., Mekh. 9(2), 119 (1992) (in Russian)
N.A. Yashtulov, L.N. Patrikeev, V.O. Zenchenko, S.E. Smirnov, M.V. Lebedeva, V.R. Flid, Nanotechnol Russia, 10, 910–916 (2015). https://doi.org/10.1134/S1995078015060142
B.Y. Tsaur, Appl. Phys. Lett. 37, 708–711 (1980). https://doi.org/10.1063/1.92054
A. Schrauwen, J. Demeulemeester, A. Kumar, W. Vandervorst, C.M. Comrie, C. Detavernier, K. Temst, et al., Journal of applied physics, 114, 063518 (2013). https://doi.org/10.1063/1.4818333
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